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Preparation method of zinc oxide UV photodetector prototype device

A technology of electrical detectors and ultraviolet light, which is applied in photometry, electrical solid devices, electrical components, etc., can solve the problems of ZnO film surface corrosion and affect device performance, and achieve the effect of compact bonding and preventing device performance from deteriorating

Inactive Publication Date: 2003-03-05
ZHEJIANG UNIV
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Problems solved by technology

However, ZnO is an amphoteric semiconductor material, which is soluble in both acid and alkali. Therefore, during the wet lithography process, it will inevitably cause corrosion on the surface of the ZnO film and affect the performance of the device.

Method used

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  • Preparation method of zinc oxide UV photodetector prototype device
  • Preparation method of zinc oxide UV photodetector prototype device

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Experimental program
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Embodiment Construction

[0014] Below in conjunction with embodiment further illustrate the present invention.

[0015] The inventive method comprises the following steps successively:

[0016] 1. Spin-coat a photoresist with a thickness of 1 micron on the surface of the ZnO film, and engrave interdigitated electrodes (as shown in Figure 1) in one photolithography process. Except for the electrode pattern, the rest is still covered with a photoresist coating;

[0017] 2. Deposit metal aluminum directly on the sample after photolithography by magnetron sputtering, and control the thickness of the metal aluminum layer to 0.3 microns.

[0018] 3. Put the ZnO thin film covered with metal aluminum in an acetone solution for ultrasonic cleaning, wash off the photoresist and the aluminum layer deposited on the photoresist, and prepare the electrode.

[0019] 4. The sample was annealed at 450°C for 6 minutes under the protection of a nitrogen atmosphere to remove organic contamination on the surface of the u...

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Abstract

A preparation method of this invented Zno UV-light electric detector prototype device contains the following steps 1) spinly coating a photoresist to photolithograph an electrode pattern and remaining part is covered by the photoresist 2) depositing a metal layer on Zno surface with magnet control spurt method and thickness of the metal layer is smaller than that of the photoresist 3). putting the metal covered Zno film into acetone solution dissolving the photoresist for ultrasonic cleaning removing the photoresist and the metal layer on the photoresist surface 4) annealing under protection,removing organic dirt on the electrode surface and increasing Ohmic contact character to effectively prevent performance from turning bad due to erosion to the Zno surface.

Description

technical field [0001] The invention relates to a preparation method of a zinc oxide ultraviolet photodetector prototype device. Background technique [0002] Zinc oxide (ZnO) is a brazeite structure, a semiconductor material with a direct band gap and a wide band gap, and the band gap at room temperature is 3.3eV. ZnO can be grown at a temperature lower than 500°C, which is much lower than the preparation temperature of GaN, SiC and other II-IV semiconductor wide bandgap materials; the price of zinc is cheaper; moreover, ZnO can form an alloy with MgO, which can The tunable bandgap (from 3.3-4eV) can be obtained by adjusting the Mg composition, covering a wide ultraviolet spectral range. These characteristics make zinc oxide have many potential advantages in the detection of ultraviolet band, and have a good application prospect. [0003] In the current process of preparing the ZnO ultraviolet detector prototype device, the method of chemical wet e...

Claims

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Application Information

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IPC IPC(8): G01J1/00H01L27/14H01L31/18
CPCY02P70/50
Inventor 叶志镇黄靖云陈汉鸿
Owner ZHEJIANG UNIV
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