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Transverse epitaxial growth process of high-quality gallium nitride film

A technology of lateral epitaxial growth and gallium nitride, applied in the field of growing GaN thin films with low dislocation density, can solve the problem of high dislocation density of GaN epitaxial layer

Inactive Publication Date: 2003-01-08
NANJING UNIV
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  • Abstract
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  • Application Information

AI Technical Summary

Problems solved by technology

The outstanding disadvantage of this method is that the dislocation density in the GaN epitaxial layer is very high, generally up to 10 10 cm -2 about

Method used

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  • Transverse epitaxial growth process of high-quality gallium nitride film
  • Transverse epitaxial growth process of high-quality gallium nitride film

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Embodiment Construction

[0016] The lateral epitaxial growth technique adopted in the present invention comprises the following steps:

[0017] 1. A GaN seed layer is grown on a sapphire substrate by MOCVD, MBE or other methods.

[0018] 2. Deposit SiO on the GaN seed layer 2 、Si 3 N 4 , W and other films as a mask layer, the thickness is 100nm.

[0019] 3. Use photolithography to etch the mask layer to obtain a certain pattern, and the mask area is generally larger than the window area. graphic shape

[0020] There are mainly parallel strips and regular hexagons. For parallel strips, the width of the mask area is 2-20μm, GaN

[0021] The width of the window area is 0.2-20 μm, and the opening direction of parallel strips is along the [1ī00] orientation of GaN. positive six

[0022] Hexagonal openings, so that the [1ī00] orientation of GaN is perpendicular to the sides of the regular hexagon.

[0023] 4. Control the ratio of V-valent N atoms to III-valent Ga atoms (33-83:1), growth te...

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Abstract

The invention relates to the method of growth of gallium nitride film in high quality by the technique of extension in the lateral direction. GaN crystal seed layer is grown by use of the MOCVD, MBE or other method. The SiO2, Si3N4W etc. films are deposited on the GaN crystal seed layer with sertain graph being etched by etching method. The direction of the parallel strip opening is along the direction of GaN [1100]. The width of the mask area is 2-20 microns. The width of the GaN window area is 0.2-20 microns. Then the MOCVD or HVPE method is accepted to grow GaN in epitaxial growth till the mask layer is overspreader by the GaN. Continuing growth obtains the gallium nitride film with low dislocation density. Since HVPE providing quick growth rare, to the HVPE thick film extension can obtain GaN film even lower dislocation density.

Description

1. Technical field [0001] The present invention relates to a method and technology for growing a gallium nitride (GaN) thin film by combining lateral epitaxy technology and thin film technologies such as metal organic vapor phase epitaxy (MOCVD) and hydride vapor phase epitaxy (HVPE), especially a method for growing a low dislocation density GaN thin film. 2. Background technology [0002] Group III-V nitride materials (also known as GaN-based materials) mainly based on GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. Its 1.9-6.2eV continuously variable direct band gap, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity and other superior properties make it the best choice for the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, high-temperature m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/34H01L21/205H01L21/365
Inventor 张荣修向前顾书林卢佃清毕朝霞沈波江若琏施毅朱顺明韩平胡立群郑有炓
Owner NANJING UNIV
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