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Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field

A magnetic tunnel junction and weak magnetic field technology, which is applied in the field of three-dimensional weak magnetic field detection devices, can solve the problems of fast response time and achieve high sensitivity, magnetic moment reset and demagnetization, and high detection effects

Inactive Publication Date: 2002-07-03
北京科大天宇微电子材料技术开发有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0013] 5. Fast response time

Method used

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  • Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field
  • Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field
  • Tester with magnetic tunnel junction and magnetioelectric resistance material for 3D weak magnetic field

Examples

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example 1

[0036] Example 1: A magnetic tunnel junction magnetoresistive chip sensitive to a single direction magnetic field, composed of a three-layer film of the magnetic tunnel junction magnetoresistance sensing part and a double-layer film of a conductive thin film, is fabricated on a quartz glass substrate.

[0037] After the above-mentioned substrate with a length of 10 mm, a width of 10 mm and a thickness of 0.5 mm is ultrasonically cleaned with acetone, ultrasonically cleaned with deionized water, and finally ultrasonically cleaned with absolute ethanol. After cleaning, the substrate was blown dry with high-purity nitrogen gas. Put the cleaned substrate into the coating chamber of the magnetron sputtering coating equipment, pump the coating chamber to 2×10 -4 Pascal's vacuum. Deposit a 500 nm thick copper film on the substrate by magnetron sputtering, the working gas is 0.8 Pascal argon, and subsequently deposit a 200 nm thick silicon dioxide film on it by radio frequency magnet...

example 2

[0040] Example 2: A magnetic tunnel junction magnetoresistive chip sensitive to a single direction magnetic field, composed of a magnetic tunnel junction magnetoresistance four-layer film and a conductive thin film strip double layer film, was fabricated on a thermally oxidized silicon substrate.

[0041] The above-mentioned thermally oxidized silicon substrate with a length of 10 mm, a width of 10 mm, and a thickness of 0.5 mm (the thickness of the silicon dioxide layer on the silicon surface is 500 nanometers) is ultrasonically cleaned with acetone, then ultrasonically cleaned with deionized water, and finally ultrasonically cleaned with absolute ethanol. After cleaning, the substrate was blown dry with high-purity nitrogen gas. Put the cleaned substrate into the coating chamber of the magnetron sputtering coating equipment, pump the coating chamber to 2×10 -4 Pascal's vacuum. Deposit a 500 nanometer thick copper film on the substrate by magnetron sputtering, the working ga...

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Abstract

A 3D weark magnetic field detector is composed of three groups of magnetoelectric resistor chips with magnetic tunnel junction, which are arranged in 3D cross mode to make the magnetic sensing directios of chips perpendicular to each other. The said chip consists of substrate, two conducting films for generating bias magnetic field and reset function respectively, and induction part composed of magnetic tunnel junction, electric signal output electrode and its leading wire. Its advantages include high sensitivity and the reset and anti-damagnetizing functions.

Description

Technical field: [0001] The invention provides a three-dimensional weak magnetic field detection device using a magnetic tunnel junction magnetoresistance material. The magnetic tunnel junction magnetoresistive material consists of two ferromagnetic layers separated by an extremely thin, nanometer-thick insulator layer, or an antiferromagnetic layer is added on one of the ferromagnetic layers as a pinning Layer composition, magnetic tunnel junction materials are also known as spin-dependent tunnel junction materials. Background technique: [0002] Weak magnetic field (in the present invention refers to that magnetic field is less than 100 microtesla) detection is one of important aspect in magnetic measurement, has extensive application in national economy, as the magnetic recording read head in the information industry, the measurement of geomagnetic azimuth in navigation , the measurement of the magnetic field orientation on the aircraft, the measurement of the size and o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R33/09G11B5/37
Inventor 潘礼庆田跃邱宏王凤平吴平黄筱玲
Owner 北京科大天宇微电子材料技术开发有限公司
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