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Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material

A technology of nanowire arrays and thermoelectric batteries, which is applied to thermoelectric devices that only use the Peltier or Seebeck effect, can solve the problems of low thermoelectric conversion rate, limited application range, and large volume of thermoelectric batteries, and achieve small volume and thin thickness. Effect

Inactive Publication Date: 2002-06-05
TIANJIN UNIV
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  • Abstract
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Problems solved by technology

[0003] Thermoelectric batteries made of traditional bulk thermoelectric materials are bulky and have low thermoelectric conversion rates, which greatly limit their application range.

Method used

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  • Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material
  • Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material
  • Micro temperature difference battery made of one-dimensional nanometer linear array structure thermo-electric material

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Embodiment Construction

[0019] On the 100μm thick silicon wafer C layer, metal nickel is deposited by PVD method to form B layer. A layer of metallic aluminum is then deposited on top of the B layer. After a series of microelectronic processing procedures such as gluing, pre-baking, exposure of the P-type node area of ​​the aluminum layer, development of the P-type node area, and post-baking on the aluminum layer, one-dimensional P Type nanowire micro temperature difference material. Then, the N-type node area of ​​the aluminum layer is subjected to similar processes, such as exposure, N-type node area development, post-baking, and electrochemical technology is used to prepare a one-dimensional N-type nanowire micro-temperature difference material at the N-type node area. After the one-dimensional nanowire P-type node and N-type node are prepared on the metal aluminum layer through the above process, the microelectronic processing etching technology is used to etch the node spacing between the P-typ...

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Abstract

The invention discloses a micro-thermoelectric cell made of thermal differential material with structure of one dimension linear array. The shape of the cell is like a platelet whose thickness is 20micron-3milimeter. The body of micro thermoelectric cell is composed of two boards: upper and lower boards with laminar structure in serial; C, B, A, B, C layers The upper boards is composed of C and Blayers. The lower layer is composed of C, B, and A layer. Layer A with thickness 5-50 micron is made of a thermal differential material containing a lot of P type of node and N type of node with structure of one dimension linear array. Layer B is a conducting material layer. Layer C is an encapsulation layer made of heat conducting insulated material. The invented micro-thermoelectric cell has advantages of compactness, thin thickness. It is especially suitable for being used in micro-module of high technological system.

Description

technical field [0001] The invention relates to a micro-thermoelectric battery made of a thermoelectric material with a one-dimensional nanowire array structure. It belongs to the technical field of thermoelectric battery. Background technique [0002] A thermoelectric battery is a physical battery, which is a device that converts heat energy into electrical energy. According to the Seebeck effect, if two different metals are connected to form a circuit, when the temperature of the two joints is different, an electromotive force will be generated in the circuit due to the different contact potential of the two joints, which is the Seebeck electromotive force. For semiconductors, if the N-type and P-type semiconductor thermoelectric materials are connected into π-type. When the temperature of the two ends is different, the holes in the P-type semiconductor and the electrons in the N-type semiconductor will accumulate to the low-temperature end respe...

Claims

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Application Information

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IPC IPC(8): H01L35/28H01L35/32
Inventor 王为张建中陈岩郭鹤桐
Owner TIANJIN UNIV
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