Method or growing N-Al co-blended p type ZnO transistor film by two step method
A co-doping, p-type technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problem of low carrier mobility, unsatisfactory crystal quality and doping uniformity, p-type Conduction repeatability and stability are not high, to achieve the effect of improving mobility, good p-type conduction characteristics, and improving crystal quality
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[0017] The following combination figure 1 , the present invention will be further illustrated by examples.
[0018] Put the substrate on the sample holder 5 of the reaction chamber after cleaning, and place the substrate to be deposited facing down to effectively prevent the contamination of the substrate by granular impurities. The vacuum degree of the reaction chamber is pumped to 4×10 -3 Pa, with the zinc-aluminum alloy whose mass percentage of aluminum is 0.15% as the target, the target is placed on the S gun 9, and the N with a purity of more than 99.99% 2 O and O with a purity of 99.99% or more 2 As the sputtering atmosphere, the two gases enter the buffer chamber 4 through the inlet pipes 1 and 2 respectively, and after being fully mixed in the buffer chamber, they are introduced into the vacuum reaction chamber through the gas introduction pipe 11. The pressure in the vacuum chamber is controlled by the automatic pressure controller 8, and the pressure is 4Pa. N 2 ...
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