Parallel array-type small refrigerator and production thereof

Abstract

Parallel array micro-cooler and its preparation method are a technology used to improve the temperature control of laser devices and computer CPUs, improve the heat dissipation inside the chip, thereby improving the working efficiency of the device chip and prolonging the service life. Its layered structure , and its positions are arranged in order: the silicon substrate (6) of the P-type semiconductor, the buffer layer (7) of the P-type semiconductor, the first heavily doped layer (8) of the P-type semiconductor, and the superlattice layer ( 9), the second heavily doped layer (10) of the P-type semiconductor, the third heavily doped layer (11) of the P-type semiconductor, and the metal layer (13); the silicon dioxide isolation layer (12) is located between the P-type semiconductor between the metal layer and the first heavily doped P-type semiconductor. The manufacturing process adopts the oxide isolation process to form a parallel array micro-cooler, which can improve the yield of device manufacturing and reduce the contact area, thereby greatly reducing the interface contact resistance and greatly improving the cooling efficiency.

Description

technical field [0001] The invention is a technology for improving the temperature control of laser devices and computer CPUs, improving the heat dissipation inside the chip, thereby improving the working efficiency of the device chip and prolonging the service life, belonging to the field of advanced manufacturing and automation technology. Background technique [0002] Currently, thermoelectric materials can form solid-state coolers and power generators. Solid-state thermoelectric generators and refrigerators use the Peltier effect of electrons to take away excess heat, and they mainly face the problem of thermoelectric conversion efficiency. The performance index of thermoelectric cooling devices is generally described by the quality coefficient ZT, and its mathematical expression is: ZT=S 2 σT / k, where T is the absolute temperature, S is the Seebeck coefficient of the material, σ is the electrical conductivity, and k is the thermal conductivity. ...

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Problems solved by technology

However, this process requires strict control of the thickness of the thermoelectric unit. During the bonding process of each substrate, if the thickness of the unit is different, the device will be separated and an open circuit will be formed. Secondly, the precise positioning of the position of the thermoelectric unit and the metal electrode is also required. to reduce contact resistance

On the other hand, since the materials used are V and VI compound thin films, the thermoelectric quality index ZT of the system cannot break through the limit of bulk materials, thus limiting the working efficiency of the device.

For multi-stage series structure micro-refrigerators, when one of the units is disconnected, the remaining units will lose the ability to continue to work, and for the series structure of multi-stage P, N-type thermoelectric units, the surface contact resistance is relatively large

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