Super radiative light emitting transistor with self organized quantum spot as active region
A technology of self-organized quantum dots and quantum dot active regions, applied in phonon exciters, lasers, laser parts and other directions, can solve the problems of limited output power, high operating current, obvious thermal effects of devices, etc., to suppress lasing , the effect of wide spectral output
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[0026] Please refer to figure 2 , image 3 , a kind of self-organized quantum dot of the present invention is the superluminescent light-emitting tube of active region, comprises:
[0027] an upper restricted layer 7;
[0028] An upper graded-index waveguide layer 8, which is fabricated under the upper confinement layer 7;
[0029] A self-organized quantum dot active region 9, the self-organized quantum dot active region 9 is fabricated under the upper graded index waveguide layer 8; said self-organized quantum dot is indium arsenic, indium gallium arsenic, indium aluminum arsenic or InGaAlAs self-organized quantum dots.
[0030] A lower graded index waveguide layer 10, the lower graded index waveguide layer 10 is fabricated below the quantum dot active region 9;
[0031] A lower confinement layer 11, the lower confinement layer 11 is fabricated under the lower graded index waveguide layer 10;
[0032] A substrate 12, which is fabricated under the lower confinement layer...
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