High-speed modulation high-power fundamental mode semiconductor laser chip and use method thereof

Abstract

The invention discloses a high-speed modulation high-power fundamental mode semiconductor laser chip which comprises an active conical waveguide, a passive bent waveguide and an active oscillation stage waveguide which are arranged on a chip insulating layer. Wherein the active conical waveguide and the active oscillation stage waveguide are connected through the passive bent waveguide, and the passive bent waveguide is connected with the narrow end of the active conical waveguide. Meanwhile, the active conical waveguide and the active oscillation stage waveguide are both provided with electrodes, and the passive bent waveguide is not provided with an electrode, so that the active conical waveguide and the active oscillation stage waveguide are insulated and isolated. A new current injection structure is redesigned, namely, an active oscillation stage waveguide for generating high-quality fundamental transverse mode seed light, a passive bent waveguide for realizing high-order mode filtering and line width compression, and an active conical waveguide for realizing fundamental mode light one-way amplification. The electro-optical delay of each chip and the frequency chirp effect caused by the change of carrier concentration are effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor lasers, in particular to a high-speed modulated high-power fundamental-mode semiconductor laser chip and a method for using the same. Background technique [0002] The information disclosed in the Background of the Invention is only intended to increase the understanding of the general background of the invention, and is not necessarily to be taken as an acknowledgment or any form of suggestion that the information constitutes the prior art that is already known to those skilled in the art. [0003] High-power semiconductor lasers are widely used in pumping, optical communication, medical treatment, laser detection and other fields, and the performance requirements of semiconductor lasers are also getting higher and higher. Laser modulation refers to the process of using laser as a carrier to carry a low-frequency telecommunication system. Laser modulation is divided into internal modulation...

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Problems solved by technology

However, the inventors found that in practical applications, the P-side metal of this inverted structure is very prone to fracture, resulting in device failure. At the same time, due to the inverted structure, the lower cavity will cause a change in local refractive index and low heat dissipation efficiency. problems that adversely affect the reliability of the device

In addition, this patented technology still cannot solve the problem of electro-optical delay and improve frequency chirp

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