A kind of high-power semiconductor chip and its preparation method

Abstract

The invention discloses a high-power semiconductor chip and a preparation method thereof. The semiconductor chip comprises: a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, a lateral grating layer, and a substrate arranged sequentially from bottom to top. An upper confinement layer, a contact layer, a current isolation medium layer, and a metal layer; wherein, the lateral grating layer includes multiple groups of lateral gratings, and the multiple groups of lateral gratings are arranged in sequence along the first direction, and the periods of the multiple groups of lateral gratings are different , each group of side gratings includes a plurality of gratings, the plurality of gratings are arranged along the second direction, and the first direction intersects the second direction. By setting the lateral grating layer in the waveguide, the propagation loss of the high-order light lateral mode in the waveguide is improved, and the purpose of suppressing the lasing of the high-order light lateral mode is achieved; multiple groups of gratings with different periods are set to suppress the gain modulation caused by a single grating. And the lasing of the intensity oscillation light mode caused by the modulation of the refractive index can suppress the periodic oscillation of the lateral light intensity and eliminate the double peaks in the far field.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a high-power semiconductor chip and a preparation method thereof. Background technique [0002] The development direction of high-power semiconductor laser chips is higher output optical power and higher brightness. Increasing the width of the light-emitting area of ​​the laser chip and preparing a semiconductor laser chip with a wide waveguide is an effective means to increase the optical power. For example, the power of a semiconductor laser chip with a waveguide width of about 100-200 microns can reach more than 10W. However, a problem caused by the increase in the width of the light-emitting region is that when the chip is working, dozens or even more high-order light modes are simultaneously lased laterally, resulting in an increase in the divergence angle. The currently used method to suppress high-order light lateral mode lasing is to introduce multiple grati...

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a high-power semiconductor chip and its preparation method to solve the problem of far-field multi-peaks caused when controlling and suppressing high-order optical lateral mode lasing

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