High-power semiconductor chip and preparation method thereof

Abstract

The invention discloses a high-power semiconductor chip and a preparation method thereof. The semiconductor chip comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, a lateral grating layer, an upper limiting layer, a contact layer, a current isolation dielectric layer and a metal layer, which are sequentially arranged from bottom to top, wherein the lateral grating layer comprises a plurality of groups of lateral gratings, the plurality of groups of lateral gratings are sequentially arranged in a first direction, the periods of theplurality of groups of lateral gratings are different, each group of lateral gratings comprises a plurality of gratings, the plurality of gratings are arranged along a second direction, and the firstdirection is intersected with the second direction. Through the arrangement of the lateral grating layer in the waveguide, the propagation loss of the high-order light lateral mode in the waveguide is improved, and the purpose of suppressing the high-order light lateral mode lasing is achieved; the plurality of groups of gratings with different periods are arranged, so that intensity oscillationlight mode lasing caused by single grating gain modulation and refractive index modulation is inhibited, the effect of inhibiting lateral light intensity periodic oscillation is achieved, and far-field bimodal is eliminated.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronics, in particular to a high-power semiconductor chip and a preparation method thereof. Background technique [0002] The development direction of high-power semiconductor laser chips is higher output optical power and higher brightness. Increasing the width of the light-emitting area of ​​the laser chip and preparing a semiconductor laser chip with a wide waveguide is an effective means to increase the optical power. For example, the power of a semiconductor laser chip with a waveguide width of about 100-200 microns can reach more than 10W. However, a problem caused by the increase in the width of the light-emitting region is that when the chip is working, dozens or even more high-order light modes are simultaneously lased laterally, resulting in an increase in the divergence angle. The currently used method to suppress high-order light lateral mode lasing is to introduce multiple grati...

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Problems solved by technology

[0003] In view of this, an embodiment of the present invention provides a high-power semiconductor chip and its preparation method to solve the problem of far-field multi-peaks caused when controlling and suppressing high-order optical lateral mode lasing

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