Distributed feedback laser and preparation method thereof

Abstract

The invention discloses a distributed feedback laser and a preparation method thereof, and the laser comprises a laser epitaxial structure which comprises a substrate and a plurality of epitaxial layers located at one side of the substrate; the first electrode layer is positioned on one side, far away from the substrate, of the epitaxial layer; wherein the multi-layer epitaxial layer comprises at least one grating resonant cavity structure, and the grating resonant cavity structure comprises a first grating structure, a resonant cavity structure and a second grating structure which are sequentially arranged along a first direction; the grating period of the first grating structure and the grating period of the second grating structure are different from the grating period of the resonant cavity structure, and the first grating structure, the resonant cavity structure and the second grating structure only have one common lasing mode; the second electrode layer is located on the side, away from the epitaxial layer, of the substrate. The invention effectively reduces the grating preparation number, reduces the grating preparation precision requirement, reduces the device preparation difficulty and preparation cost, reduces the optical loss of the device, improves the optical coupling efficiency, inhibits multimode lasing, and significantly improves the application performance of the device.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of lasers, and in particular, to a distributed feedback laser and a preparation method thereof. Background technique [0002] Semiconductor lasers, also known as laser diodes, are made of semiconductor materials such as gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN), aluminum nitride (AlN), cadmium sulfide (CdS), zinc sulfide ( ZnS) and other lasers as working materials have the advantages of small size, high efficiency and long life. Among them, the narrow linewidth semiconductor laser represented by distributed feedback (DFB) laser has the characteristics of good single-mode performance, narrow spectral half-height width, and high modulation rate, and has important applications in laser communication, laser ranging, and lidar. , has received extensive attention from industry and academia. [0003] Distributed feedback semiconductor lasers require the preparat...

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Problems solved by technology

[0004] In view of this, an embodiment of the present invention provides a distributed feedback laser and its preparation method to solve the problem of high etching cost, low etching efficiency and low precision caused by the use of multiple pairs of grating structures in the prior art, resulting in laser grating scattering loss Large, low coupling efficiency and multi-mode lasing phenomenon, which ultimately affects the technical problems of the application performance of the laser

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