Sensitive amplifier

A sensitive amplifier and ring oscillator technology, applied in the field of sensitive amplifiers, can solve problems such as large impact

Pending Publication Date: 2022-07-29
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] With the miniaturization of the line width of semiconductor memory, the capacitance value of the storage unit in the semiconductor memory decreases, which makes the noise have a greater impact on the normal operation of the semiconductor memory

Method used

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  • Sensitive amplifier
  • Sensitive amplifier
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Examples

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Embodiment Construction

[0064] Exemplary embodiments will be described in detail herein, examples of which are illustrated in the accompanying drawings. Where the following description refers to the drawings, the same numerals in different drawings refer to the same or similar elements unless otherwise indicated. The implementations described in the illustrative examples below are not intended to represent all implementations consistent with this application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as recited in the appended claims.

[0065] like figure 1 As shown, a sense amplifier includes a first P-type transistor P1, a second P-type transistor P2, a first N-type transistor N1 and a second N-type transistor N2.

[0066] The gate of the first P-type transistor P1 is connected to the drain of the second P-type transistor P2, and the gate of the second P-type transistor P2 is connected to the drain of the first P-type transis...

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Abstract

The invention provides a sensitive amplifier which comprises a control module which is provided with an input end and an output end and is used for carrying out pulse width adjustment on a first offset elimination signal received by the input end according to a transistor process corner and generating and outputting a second offset elimination signal, and an amplification module which is connected with the output end of the control module and is used for amplifying the second offset elimination signal. And the offset noise elimination module is used for eliminating the offset noise of the amplification module under the control of the second offset elimination signal. According to the scheme, the compensation voltage with the proper size can be formed on the reading bit line and the complementary reading bit line, noise caused by manufacturing difference of transistors is accurately eliminated, and the accuracy of the sensitive amplifier is improved.

Description

technical field [0001] The present application relates to, but is not limited to, a sense amplifier. Background technique [0002] With the shrinking of the line width of the semiconductor memory, the capacitance value of the memory cell in the semiconductor memory decreases accordingly, so that the noise has a greater influence on the normal operation of the semiconductor memory. [0003] The sense amplifier can eliminate the noise caused by the manufacturing difference of the transistor in the semiconductor memory, so that the semiconductor memory can store the data accurately. When the sense amplifier works in the offset elimination stage, a compensation voltage is formed on the readout bit line and the complementary readout bit line, and the magnitude of the compensation voltage will affect the noise elimination effect. [0004] Therefore, how to generate an appropriate compensation voltage on the bit line and the complementary bit line is very important for semi-elimin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C7/06G11C7/08G11C7/22
CPCG11C7/062G11C7/08G11C7/22
Inventor 杨宇
Owner CHANGXIN MEMORY TECH INC
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