Method for passivating tin oxide/perovskite interface layer of perovskite solar cell by magnesium iodide

A solar cell, magnesium iodide technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems that have not been proved by research reports, and achieve the effect of reducing defect concentration, improving conductivity, current and efficiency.

Pending Publication Date: 2022-07-05
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Analogous to monovalent ions, the role of divalent ions at the interface has certain research value, but there has been no research report to prove the relevant role

Method used

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  • Method for passivating tin oxide/perovskite interface layer of perovskite solar cell by magnesium iodide
  • Method for passivating tin oxide/perovskite interface layer of perovskite solar cell by magnesium iodide
  • Method for passivating tin oxide/perovskite interface layer of perovskite solar cell by magnesium iodide

Examples

Experimental program
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Embodiment 1

[0018] This embodiment provides a method for introducing and preparing divalent magnesium ions at the interface of the electron transport layer / perovskite layer. Cut the ITO glass into a size of 15mm×20mm, and 4mm×20mm of it is etched with zinc powder and 2M dilute hydrochloric acid. After waiting for 5 minutes, rinse with clean water. Clean the glass surface with a lint-free cloth or cotton and dish soap. Put the small pieces of ITO glass into the glass cleaning rack for cleaning in turn, add deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 20 minutes, and tape the cleaned ITO conductive glass with ultraviolet ozone for 30 minutes. with SnO 2 Aqueous solution (15% SnO 2 Aqueous gel: deionized water = 1:4), filtered before use. Spin coating the prepared SnO on the spin coater 2 Aqueous solution, rotating speed 3000rpm for 20s, then annealed at 180°C for 30min on a heating plate, and then cooled to room temperature. The ethanolic magnesium iodide ...

Embodiment 2

[0020] This embodiment provides a method for introducing and preparing divalent magnesium ions at the interface of the electron transport layer / perovskite layer. Cut the ITO glass into a size of 15mm×20mm, and 4mm×20mm of it is etched with zinc powder and 2M dilute hydrochloric acid. After waiting for 5 minutes, rinse with clean water. Clean the glass surface with a lint-free cloth or cotton and dish soap. Put the small pieces of ITO glass into the glass cleaning rack for cleaning in turn, add deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 20 minutes, and tape the cleaned ITO conductive glass with ultraviolet ozone for 30 minutes. with SnO 2 Aqueous solution (15% SnO 2 Aqueous gel: deionized water = 1:4), filtered before use. Spin coating the prepared SnO on the spin coater 2 Aqueous solution, rotating speed 3000rpm for 20s, then annealed at 180°C for 30min on a heating plate, and then cooled to room temperature. The ethanolic magnesium iodide ...

Embodiment 3

[0022] This embodiment provides a method for introducing and preparing divalent magnesium ions at the interface of the electron transport layer / perovskite layer. Cut the ITO glass into a size of 15mm×20mm, and 4mm×20mm of it is etched with zinc powder and 2M dilute hydrochloric acid. After waiting for 5 minutes, rinse with clean water. Clean the glass surface with a lint-free cloth or cotton and dish soap. Put the small pieces of ITO glass into the glass cleaning rack for cleaning in turn, add deionized water, acetone, and absolute ethanol for ultrasonic cleaning for 20 minutes, and tape the cleaned ITO conductive glass with ultraviolet ozone for 30 minutes. with SnO 2 Aqueous solution (15% SnO 2 Aqueous gel: deionized water = 1:4), filtered before use. Spin coating the prepared SnO on the spin coater 2 Aqueous solution, rotating speed 3000rpm for 20s, then annealed at 180°C for 30min on a heating plate, and then cooled to room temperature. The ethanolic magnesium iodide ...

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Abstract

The invention relates to the technical field of perovskite photovoltaics, and discloses a method for passivating a tin oxide / perovskite interface layer of a perovskite solar cell through magnesium iodide, and the surface of SnO2 is spin-coated with a magnesium iodide ethanol solution prepared in advance. After optimization, a magnesium iodide ethanol solution with the concentration of 1 mg / mL is subjected to spin coating through the procedure of 3000 rpm for 20 s, and the optimal magnesium iodide film thickness is obtained. The efficiency of a perovskite solar cell device manufactured under the thickness is improved, and due to the characteristic of high conductivity of magnesium iodide, the improvement of current is remarkably influenced. And magnesium iodide has a certain inhibition effect on defects at the interface, and iodide ions can reduce the stability problem caused by loss of iodide ions in the perovskite layer.

Description

technical field [0001] The invention relates to the technical field of perovskite solar cells, in particular to a preparation method for introducing divalent magnesium ions at the interface of an electron transport layer / perovskite layer. Background technique [0002] Organic-inorganic hybrid perovskite solar cells have many advantages, such as facile fabrication, low cost, flexibility, high carrier mobility, low exciton binding energy, and long carrier diffusion. The advantages of the adjustable length and bandgap have made it develop rapidly in the past ten years and attract more and more attention. [0003] In recent years, various small molecule modifications have been introduced in the electron transport layer (ETL) / perovskite layer or perovskite layer / hole transport layer (HTL). The chemical reaction of these functional small molecules with surface dangling bonds or non-bonded atoms reduces non-radiation. [0004] In this regard, introducing ions into the ETL / perovsk...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/15H10K71/12H10K30/15H10K30/353
Inventor 孙喆陈雷李一铭
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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