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Graphene film growth substrate and preparation method and application thereof

A graphene film, growth substrate technology, applied in the direction of graphene, nano-carbon, etc., to achieve the effect of simple operation, avoid roughness increase, and improve production efficiency

Active Publication Date: 2022-06-10
北京石墨烯技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the actual production process, the electrochemical polishing steps are cumbersome and time-consuming
[0004]In addition, in the existing copper foil preparation process, it is difficult to carry out the copper foil substrate in a roll-to-roll manner, especially the process of electrochemical polishing, usually only a single to polish
This has brought great difficulties to the subsequent large-scale roll-to-roll production and preparation of graphene, which cannot meet the current huge demand for graphene films.

Method used

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  • Graphene film growth substrate and preparation method and application thereof
  • Graphene film growth substrate and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0045] A preparation method for a graphene film growth substrate, comprising the following steps:

[0046] (1) providing a copper foil substrate having a first surface and a second surface opposite to the first surface;

[0047] (2) After a protective film is pasted on the first surface, the second surface is oxidized to prepare intermediate I;

[0048] (3) removing the protective film of the intermediate I to expose the first surface.

[0049] Oxidation treatment can make copper into copper oxide. During the subsequent annealing process of preparing graphene, copper oxide can continue to decompose and provide trace amounts of oxygen. These oxygen can continue to combine with carbon impurities on the surface or inside of copper foil to form carbon monoxide or Carbon dioxide is discharged with the airflow, avoiding the influence of carbon impurities on the growth of graphene in the subsequent stage, thereby greatly increasing the single-layer rate of graphene, reducing the gra...

Embodiment 1

[0104] Example 1

[0105] This embodiment provides a graphene film growth substrate and a preparation method thereof. details as follows:

[0106] Step 1. Clean the two surfaces of the substrate:

[0107] 1.1 Ultrasonic cleaning of 25 μm thick polycrystalline copper foil in acetone solution for 5 minutes;

[0108] 1.2 The copper foil is ultrasonically cleaned in water and acetic acid for 5 minutes each;

[0109] 1.3 The copper foil substrate was ultrasonically cleaned in water and ethanol for 5 minutes each; and dried with nitrogen.

[0110] Step 2. Apply protective film to the first surface of the substrate, and oxidize the second surface:

[0111] 2.1 Attach the PVC electrostatic film to the first surface of the cleaned and dried copper foil;

[0112] 2.2 Float the copper foil on the surface of the oxidizing reagent for 15 minutes, and the second surface without PVC film is in contact with the oxidizing reagent. The oxidizing reagent is NaClO with a mass concentration o...

Embodiment 2

[0118] Example 2

[0119] This embodiment provides a graphene film growth substrate and a preparation method thereof. details as follows:

[0120] Step 1. Clean the two surfaces of the substrate:

[0121] 1.1 Ultrasonic cleaning of 25 μm thick polycrystalline copper foil in acetone solution for 5 minutes;

[0122] 1.2 The copper foil is ultrasonically cleaned in water and acetic acid for 5 minutes each;

[0123] 1.3 The copper foil substrate was ultrasonically cleaned in water and ethanol for 5 minutes each; and dried with nitrogen.

[0124] Step 2: Apply a protective film to the first surface of the substrate, and oxidize the second surface:

[0125] 2.1 Attach the PVC electrostatic film to the first surface of the cleaned and dried copper foil;

[0126] 2.2 Float the copper foil on the surface of the oxidizing reagent for 15 minutes, and the second surface without PVC film is in contact with the oxidizing reagent. The oxidizing reagent is NaClO with a mass concentration...

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Abstract

The invention relates to a graphene film growth substrate and a preparation method and application thereof. The preparation method of the graphene film growth substrate comprises the following steps: providing a copper foil substrate, wherein the copper foil substrate is provided with a first surface and a second surface opposite to the first surface; performing protective film pasting treatment on the first surface, and performing oxidation treatment on the second surface to prepare an intermediate I; and removing the protective film to expose the first surface. The method is simple to operate, can reduce the content of carbon impurities in the substrate, remarkably improves the single-layer rate of graphene, can be carried out in a roll-to-roll manner on a large scale, can remarkably improve the production efficiency of the copper foil substrate of the substrate, can be used for preparing the copper foil substrate on a large scale, and is combined with a preparation method of a large-scale graphene film, so that the production cost is reduced. And the production efficiency of the graphene film is improved.

Description

technical field [0001] The invention relates to the technical field of graphene preparation, in particular to a graphene film growth substrate and a preparation method and application thereof. Background technique [0002] Due to its good physical and chemical properties, such as ultra-high carrier mobility, high light transmittance, good mechanical properties, etc., graphene has been widely studied and has been widely used in transparent conductive films, photoelectric detection, catalysis, biological detection, etc. and other fields have shown its potential practical value. So far, preparation methods such as mechanical exfoliation method, silicon carbide epitaxy method, liquid phase exfoliation method, redox method, chemical vapor deposition (CVD) and bottom-up synthesis method have been developed. These methods have their own advantages and are suitable for different occasions. Among them, the chemical vapor deposition method on the surface of copper foil has many advan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
CPCC01B32/186
Inventor 张宝勋李炯利王旭东王刚罗圭纳
Owner 北京石墨烯技术研究院有限公司
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