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Deep pad wafer-level preparation method for reducing wafer-level glue bonding bubbles

A wafer-level, air bubble technology, which is applied in the fields of electrical components, climate sustainability, and final product manufacturing, can solve the problems of increasing bonding adhesives and increasing the difficulty of controlling the number of Pad air bubbles, achieving remarkable results and reducing residual glue overflow Glue risk, the effect of solving high defect rate

Pending Publication Date: 2022-05-31
珠海天成先进半导体科技有限公司
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Problems solved by technology

[0005] In view of the problem in the prior art that when the wafer Pad is greater than 1 μm, it is difficult to control the number of Pad bubbles due to the increase in the depth of the bonding glue flowing into the cavity, the present invention provides a method for eliminating wafer-level glue bonding bubbles The deep pad wafer-level preparation method effectively reduces the air bubbles in the deep pad wafer and ensures the yield of the product

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  • Deep pad wafer-level preparation method for reducing wafer-level glue bonding bubbles
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  • Deep pad wafer-level preparation method for reducing wafer-level glue bonding bubbles

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[0026] In order to enable those skilled in the art to better understand the solutions of the present invention, the following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only It is an embodiment of a part of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts shall fall within the protection scope of the present invention.

[0027] It should be noted that the terms "first" and "second" in the description and claims of the present invention and the above drawings are used to distinguish similar objects, but not necessarily used to describe a specific sequence or sequence. It is to be understood that the data so used are interchangeable under appropriate ...

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Abstract

The invention provides a deep pad wafer-level preparation method capable of reducing wafer-level glue bonding bubbles, which is characterized in that the generation of the Pad bubbles is controlled by controlling the flow rate of glue through temperature and coating reasonable glue amount, and particularly, a wafer is repeatedly pre-vacuumized in a bonding chamber for many times to finish the bubble discharging process of the wafer, so that the production efficiency of the wafer is improved. Meanwhile, a low-temperature preheating method is combined, so that the flowing speed of the bonding glue is slowed down under the condition of low viscosity, the risk of residual glue overflowing is reduced, low-rate stepped heating is matched, a traditional one-step heating bonding mode is changed, and the bubble reject ratio is basically controlled and is basically about five thousandths.

Description

technical field [0001] The invention relates to the technical field of advanced electronic packaging, in particular to a deep pad wafer-level preparation method for reducing wafer-level adhesive bonding bubbles. Background technique [0002] The integrated circuit technology and the miniaturization and multifunctional integration of electronic devices have promoted the development of MEMS technology. MEMS uses advanced semiconductor technology and technology to integrate machinery, electronics and even systems into one chip, and has great application prospects in aerospace, information communication, biomedical and other fields. The three-dimensional integration technology based on through-silicon vias can greatly reduce the chip size by making vertical three-dimensional integration, and at the same time improve the interconnection density and electrical performance, especially in the field of network big data and memory manufacturing, as well as MEMS systems. It has become...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/56H01L21/48H01L21/60
CPCH01L21/56H01L21/4825H01L2021/60097Y02P70/50
Inventor 霍瑞霞陈雷达刘建军陈新鹏蒲晓龙
Owner 珠海天成先进半导体科技有限公司
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