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Rare earth precursor, method of preparing same, and method of forming thin film using same

A technology of rare earth elements and ligands, used in the field of vapor deposition compounds, to achieve the effects of excellent thermal stability and volatility, excellent film physical properties, and excellent reactivity

Pending Publication Date: 2022-05-27
韩松化学股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0025] The present application aims to solve the problems of the existing rare earth precursors as described above, and the purpose of the present application is to provide a rare earth precursor compound for deposition, which has excellent thermal stability and volatility and is compatible with the reaction Excellent reactivity of gases

Method used

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  • Rare earth precursor, method of preparing same, and method of forming thin film using same
  • Rare earth precursor, method of preparing same, and method of forming thin film using same
  • Rare earth precursor, method of preparing same, and method of forming thin film using same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0085] (NHC)La[N(SiMe 3 ) 2 ] 3 Synthesis

[0086] Weigh 7.36 g (0.03 mol) of lanthanum(III) chloride and 0.03 mol of alkylimidazolium chloride or bromine (1-R1-3-R2-4-R3-5-R4-imidazolium chloride or bromine) in a flask, and 200 mL of tetrahydrofuran (THF) was added to dissolve the compound. At 0°C, 22 g (0.12 mol) of sodium bis(trimethylsilyl)amide in THF was slowly added to the solution. After that, the reaction was completed by stirring at room temperature for about 16 hours. Then, the solvent and volatile by-products were removed under vacuum. The residue was diluted by adding hexane, the diluted residue was filtered through a filter containing celite, and the filtrate was again dried under vacuum. The solid was redissolved in hexane and recrystallized at -40°C to give a colorless or white crystalline solid.

[0087] The reaction of Synthesis Example 1 is represented by Chemical Reaction Formula 1 below.

[0088] [chemical reaction formula 1]

[0089]

[0090]...

Synthetic example 2

[0091] (NHC)La(O t Bu) 3 Synthesis

[0092] The (NHC)La[N(SiMe) synthesized in Synthesis Example 1 3 ) 2 ] 3 (0.0045 mol) was dissolved in 50 mL of toluene and 1.28 mL (0.0135 mol) of tert-butanol diluted in toluene was added slowly at 0°C. After that, the reaction was completed by stirring at room temperature for about 16 hours. Then, the solvent and volatile by-products were removed under vacuum. The residue was diluted by adding hexane, the diluted residue was filtered through a filter containing celite, and the filtrate was again dried under vacuum. The solid was redissolved in hexane and recrystallized at -40°C to give an orange solid.

[0093] The reaction of Synthesis Example 2 is represented by the following chemical reaction formula 2.

[0094] [chemical reaction formula 2]

[0095]

[0096] In chemical reaction 2, t Bu is tert-butyl and HMDS is hexamethyldisilazane.

Embodiment 1

[0097] (Me,Me-NHC)La[N(SiMe 3 ) 2 ] 3 Synthesis

[0098] According to Synthesis Example 1, (Me,Me-NHC)La[N(SiMe 3 ) 2 ] 3 . In chemical reaction 1, R 1 and R 2 each is methyl, R 3 and R 4 Each is hydrogen, Ln is lanthanum (la), and the synthesized compound is as follows

[0099]Formula 3-1 represents.

[0100]

[0101] The synthesized compound was a colorless crystalline solid with a yield of 70.51%, and the measured 1 The H-NMR peaks are as follows.

[0102] 1 H-NMR (400MHz, C 6 D 6 ): δ0.35(s, 54H), δ3.36(s, 6H), δ5.94(s, 2H).

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Abstract

The present application relates to a compound capable of achieving thin film deposition by vapor deposition, and more particularly, to a rare earth compound suitable for atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent thermal stability and reactivity, a rare earth precursor including the same, a method of preparing the same, and a method of forming a thin film using the same.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims priority to Korean Patent Application No. 10-2020-0149843 filed on Nov. 11, 2020, the entire contents of which are incorporated herein by reference. technical field [0003] The present application relates to a vapor deposition compound capable of performing thin film deposition by vapor deposition, and more particularly, to a compound suitable for atomic layer deposition (ALD) or chemical vapor deposition (CVD) and having excellent volatility and thermal stability and is compatible with Rare earth precursors with excellent reactivity of reactive gases, methods for preparing the same, and methods for forming thin films using the same. Background technique [0004] Using silicon oxide (SiO 2 ) as a dielectric transistor, which has been in use for decades, has recently been replaced by "high-k metal gate transistors" as semiconductor devices have been densely packed and channel lengths have shorte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C07F5/00C07F7/10C23C16/40C23C16/455C23C16/50
CPCC07F5/00C07F7/10C23C16/45527C23C16/45523C23C16/50C23C16/40Y02E60/50C07F7/0805C07F19/00C23C16/45553
Inventor 朴美罗廉圭玄李炫炅昔壮衒朴正佑
Owner 韩松化学股份有限公司
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