Semiconductor structure and manufacturing method of semiconductor structure

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of reducing the yield of semiconductor structures, affecting the electrical performance of gate structures, and easily over-etching the side of polysilicon, etc. To achieve the effect of guaranteed electrical performance, good electrical performance and guaranteed yield

Pending Publication Date: 2022-05-24
CHANGXIN MEMORY TECH INC
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Problems solved by technology

[0004] However, during the formation of the gate structure of polysilicon material, due to the characteristics of polysilicon material and the limitation of etching process, the side of polysilicon will be easily over-etched during the etching process, which will affect the electrical performance of the gate structure. Reduced yield of semiconductor structures

Method used

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  • Semiconductor structure and manufacturing method of semiconductor structure
  • Semiconductor structure and manufacturing method of semiconductor structure
  • Semiconductor structure and manufacturing method of semiconductor structure

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Embodiment Construction

[0029] It can be known from the background art that during the formation process of the gate structure of polysilicon material, due to the characteristics of polysilicon material and the limitations of the etching process, the side surface of polysilicon will be easily over-etched during the etching process, thereby affecting the gate structure. electrical properties, reducing the yield of semiconductor devices.

[0030] figure 1 is a schematic structural diagram of an existing semiconductor structure before etching, figure 2 for figure 1 Schematic diagram of the semiconductor structure after etching.

[0031] The steps of forming the semiconductor structure include: Reference figure 1 and figure 2 , a substrate 400 is provided, and an initial gate dielectric layer 410a, an initial first conductive layer 420a, an initial barrier layer 430a, an initial second conductive layer 440a, and an initial insulating cover layer 450a are sequentially stacked on the substrate 400. T...

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Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method of the semiconductor structure. The semiconductor structure comprises a substrate; the gate structure is located on the substrate and comprises a first conductive layer, a barrier layer and a second conductive layer which are stacked in sequence; wherein the first conductive layer comprises a first polycrystalline silicon layer, a first metal layer and a second polycrystalline silicon layer, the first polycrystalline silicon layer is close to the substrate, and the second polycrystalline silicon layer is tightly attached to the barrier layer; the first metal layer is located between the first polycrystalline silicon layer and the second polycrystalline silicon layer. The gate structure provided by the embodiment of the invention has a vertical morphology and relatively strong electrical performance.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a semiconductor structure and a method for manufacturing the semiconductor structure. Background technique [0002] The field effect transistor in the semiconductor structure acts as a variable current switch that can control the output current based on the input voltage. A field effect transistor includes three terminals: gate, drain and source. Under the action of an electric field, the gate can form or eliminate the channel between the source and drain, allowing or hindering the flow of electrons. [0003] At present, most field effect transistors use polysilicon materials and other conductive materials to form gate structures. The use of polysilicon to form the gate structure mainly has the following advantages: the interface between polysilicon and the gate dielectric layer has fewer defects; the work function of polysilicon is easy to adjust, and t...

Claims

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Application Information

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IPC IPC(8): H01L29/423H01L29/49H01L21/28
CPCH01L29/42372H01L29/4925H01L21/28008H01L29/423H01L21/28H01L29/49H01L29/78
Inventor 龙强
Owner CHANGXIN MEMORY TECH INC
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