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High-thickness high-strength light-cured silicon nitride ceramic and preparation method thereof

A silicon nitride ceramic, high-intensity light technology, applied in the field of additive manufacturing, can solve the problems of cracking and deformation of the green body, limiting the degreasing and sintering of high-thickness ceramic green bodies, etc.

Pending Publication Date: 2022-05-13
NAT INST CORP OF ADDITIVE MFG XIAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the thermal debinding process, thermal expansion is easy to cause cracking and deformation of the green body, and limits the debinding and sintering of high-thickness ceramic green bodies

Method used

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  • High-thickness high-strength light-cured silicon nitride ceramic and preparation method thereof
  • High-thickness high-strength light-cured silicon nitride ceramic and preparation method thereof
  • High-thickness high-strength light-cured silicon nitride ceramic and preparation method thereof

Examples

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preparation example Construction

[0037] The present invention discloses a high thickness high strength light curing silicon nitride ceramic and a preparation method thereof, comprising the following steps:

[0038] Step 1, powder two-step modification.

[0039] Mix Si 3 N 4 Powder, Y 2 O 3 Powder, Al 2 O 3 Powder and SiO 2 powder, which forms a mixture of powder A, where Si 3 N 4 The mass fraction of the powder is 67%, Y 2 O 3 The mass fraction of the powder is 5%, Al 2 O 3 The mass fraction of the powder is 3%, SiO 2 The mass fraction of the powder is 25%; Si 3 N 4 The powder consists of Si particle sizes of 0.7 μm and 2 μm respectively 3 N 4 The powder is mixed according to the volume ratio of 1:1.

[0040]Add its mass of 3wt% stearic acid (stearic acid particle size greater than 100 mesh) to the above mixed powder A, carry out dry grinding modification, dry grinding process, ball ratio of 1.5 times, speed of 320rpm, dry grinding time of 20h, the dry grinding powder through 80 mesh sieving, to obtain mixed pow...

Embodiment 1

[0055] Step 1, powder two-step modification.

[0056] Mix Si 3 N 4 Powder, Y 2 O 3 Powder, Al 2 O 3 Powder and SiO 2 powder, which forms a mixture of powder A, where Si 3 N 4 The mass fraction of the powder is 67%, Y 2 O 3 The mass fraction of the powder is 5%, Al 2 O 3 The mass fraction of the powder is 3%, SiO 2 The mass fraction of the powder is 25%; Si 3 N 4 The powder consists of Si particle sizes of 0.7 μm and 2 μm respectively 3 N 4 The powder is mixed according to the volume ratio of 1:1.

[0057]Add its mass of 3wt% stearic acid (stearic acid particle size greater than 100 mesh) to the above mixed powder A, dry grinding modification, dry grinding process, ball ratio of 1.5 times, speed of 320rpm, dry grinding time of 20h, the dry grinding powder through the 80 mesh sieve to obtain mixed powder B. Then add 3wt% dispersant 9063 of mixed powder B mass to the mixed powder B, and 8wt% silane coupling agent KH560 of mixed powder B mass, wet grinding modification, wet grinding ...

Embodiment 2

[0066] In the mixing procedure in step 2, the first step is 1000 rpm and the time is 15s, the second step is 1800 rpm at 25s, and the third step is 2200 rpm with a time of 35s. The remaining unexplained portions are the same as Example 1.

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Abstract

According to the high-thickness high-strength light-cured silicon nitride ceramic and the preparation method thereof, in the preparation process, a low-temperature pore-forming agent PEG is added into ceramic paste, so that in the later degreasing process, the maximum degreasing thickness of the silicon nitride ceramic is increased to 8 mm, the degreasing time is only 60 h, and the degreasing rate can reach 99% or above. According to the characteristics that PEG is volatilized at the temperature of 200-300 DEG C and spherical holes are left, firstly, macromolecular cracking and low-temperature pore-forming agent removal are carried out in an argon atmosphere, the low-temperature pore-forming agent can be almost completely removed at the temperature of 300 DEG C, and a channel is provided for follow-up escape of small molecules. In the process, a channel is reserved in a green body in advance in the ceramic green body degreasing process, so that subsequent high-temperature removal of photosensitive resin is facilitated (cracking deformation is avoided, and the limit degreasing thickness is increased).

Description

【Technical field】 [0001] The present invention belongs to the field of additive manufacturing technology, relates to a high thickness high strength light curing silicon nitride ceramic and preparation method thereof. 【Background】 [0002] Silicon nitride ceramic components are used in a wide range of applications in mechanical, chemical and automotive fields, such as silicon nitride ceramic gears, turbine rotors, cutting tools and bearings. At present, the molding methods of silicon nitride ceramic parts include: cold isostatic pressing, dry compression molding, grouting molding and hot die casting molding. Among them, although the dry pressure molding method is more efficient, there are problems of density differences and uneven microstructure of the molded products, and it is not easy to form complex shapes and special-shaped products; cold isostatic pressing method can obtain high-density and high-uniformity molded blanks, but it is still difficult to form ceramic parts with ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B38/06C04B35/584C04B35/622B33Y70/10B33Y80/00
CPCC04B38/067C04B35/584C04B35/622B33Y70/10B33Y80/00C04B2235/3225C04B2235/3217C04B2235/3418C04B2235/483C04B2235/48C04B2235/6026C04B2235/656C04B2235/6567C04B2235/96
Inventor 潘欢卢秉恒鲍崇高刘荣臻
Owner NAT INST CORP OF ADDITIVE MFG XIAN
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