Two-dimensional material, two-dimensional material alloy and two-dimensional material heterojunction preparation method

Abstract

The invention provides a two-dimensional material, a two-dimensional material alloy and a two-dimensional material heterojunction preparation method, and belongs to the technical field of two-dimensional material preparation. A metal film or a metal oxide film is prepared on a silicon wafer through a thermal evaporation coating method to serve as a precursor film, the silicon wafer plated with the precursor film and a substrate are placed in an evaporation boat in a face-to-face mode, the precursor film is vulcanized through a chemical vapor deposition method, and the two-dimensional transition metal chalcogenide grows on the substrate. The two-dimensional material with controllable thickness and size can be obtained by changing the thickness of the precursor film and the face-to-face distance between the silicon wafer and the substrate. The preparation method provided by the invention is universally suitable for growth of two-dimensional materials including two-dimensional transition metal selenium compounds and two-dimensional transition metal tellurium compounds, can be used for preparation of two-dimensional material alloys and heterostructure materials, and is simple in preparation process, high in repeatability and suitable for industrial production. The controllability and the stability of the two-dimensional material in the growth process can be effectively improved.

Description

technical field [0001] The invention belongs to the field of preparation of two-dimensional transition metal chalcogenides, and in particular relates to a method for preparing a two-dimensional material, a two-dimensional material alloy and a two-dimensional material heterojunction. Background technique [0002] Key requirements such as miniaturization and mechanical flexibility of electronic devices have pushed the research field of two-dimensional (2D) materials to the forefront. Atomic-thick 2D crystals cover a very wide range of properties, providing a good material platform to create multifunctional 2D material devices with excellent properties. For example: two-dimensional transition metal dichalcogenides (Transition Metal Dichalcogenides, TMDs), as a representative of 2D materials, have a unique electronic band structure, high mobility, strong spin-orbit coupling and electronic valley structure, in fundamental research and spin It has broad application prospects in e...

AI Technical Summary

Problems solved by technology

However, this preparation method has more stringent requirements on the quality control of the precursor, and the controllability of the number of layers of the two-dimensional material is poor, and it may lead to residual contamination of the precursor on the substrate.

However, other methods such as chemical solution ratio for 2D material growth may cause other pollution, and the quality of the prepared 2D material single crystal is often poor, and the growth controllability of 2D material is poor.

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