Bismuth telluride thermoelectric material based on entropy engineering and preparation method thereof

A thermoelectric material, bismuth telluride technology, applied in the direction of thermoelectric device junction lead-out material, chemical instruments and methods, thermoelectric device manufacturing/processing, etc. Lattice thermal conductivity, enhanced anharmonicity, simple process effects

Active Publication Date: 2022-04-29
深圳热电新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current P-type and N-type bismuth telluride alloys have a ZT value of about 1.4, but their performance is still difficult to meet the increasingly booming market, which seriously limits their commercial applications.

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  • Bismuth telluride thermoelectric material based on entropy engineering and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] This embodiment provides a bismuth telluride thermoelectric material based on entropy engineering and its preparation method. The preparation method includes the following steps:

[0059] (1) According to the chemical formula Bi 0.97 Ag 0.03 SbT 2The stoichiometric ratio of Se weighs Bi simple substance, Ag simple substance, Sb simple substance, Te simple substance and Se simple substance; wherein, Q is Ag, x=1, y=1, z=0.03; put the weighed raw materials into quartz The tube is sealed and mixed evenly, put into a muffle furnace for smelting, and the master alloy is obtained after cooling;

[0060] Wherein, control the vacuum degree of the sealed quartz tube to be 7×10 -4 Pa; control the heating rate of the smelting to be 5°C / min, the temperature to be 1050°C, and the holding time to be 6h;

[0061] (2) Put the master alloy obtained in step (1) into an agate grinding jar or a stainless steel grinding jar, perform manual grinding for 2 hours, and obtain a sample powde...

Embodiment 2

[0064] This embodiment provides a bismuth telluride thermoelectric material based on entropy engineering and its preparation method. The preparation method includes the following steps:

[0065] (1) According to the chemical formula Bi 0.95 Ag 0.05 SbT 2 The stoichiometric ratio of Se Weigh Bi simple substance, Ag simple substance, Sb simple substance, Te simple substance and Se simple substance; wherein, Q is Ag, x=1, y=1, z=0.05; put the weighed raw materials into quartz The tube is sealed and mixed evenly, put into a muffle furnace for smelting, and the master alloy is obtained after cooling;

[0066] Wherein, control the vacuum degree of the sealed quartz tube to be 7×10 -4 Pa; control the heating rate of the smelting to be 3°C / min, the temperature to be 950°C, and the holding time to be 6h;

[0067] (2) Put the master alloy obtained in step (1) into an agate grinding jar or a stainless steel grinding jar, perform manual grinding for 3 hours, and obtain a sample powder...

Embodiment 3

[0070] This embodiment provides a bismuth telluride thermoelectric material based on entropy engineering and its preparation method. The preparation method includes the following steps:

[0071] (1) According to the chemical formula Bi 0.94 Ag 0.06 SbT 2 The stoichiometric ratio of Se is to weigh Bi simple substance, Ag simple substance, Sb simple substance, Te simple substance and Se simple substance; wherein, Q is Ag, x=1, y=1, z=0.06; put the weighed raw materials into quartz The tube is sealed and mixed evenly, put into a muffle furnace for smelting, and the master alloy is obtained after cooling;

[0072] Wherein, control the vacuum degree of the sealed quartz tube to be 7×10 -4 Pa; control the heating rate of the smelting to be 2°C / min, the temperature to be 850°C, and the holding time to be 6h;

[0073] (2) Put the master alloy obtained in step (1) into an agate grinding jar or a stainless steel grinding jar, perform manual grinding for 2 hours, and obtain a sample ...

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Abstract

The invention provides a bismuth telluride thermoelectric material based on entropy engineering and a preparation method of the bismuth telluride thermoelectric material. The chemical formula of the bismuth telluride thermoelectric material is Bi < 2-x-z > Q < z > Sb < x > Te < 3-y > Se < y >, wherein Q comprises any one or a combination of at least two of Ag, Cu or Cr; 0 < x < 2, 0 < y < 3, and 0 < z < = 0.1. According to the bismuth telluride thermoelectric material, the high-performance room-temperature thermoelectric material is obtained through entropy engineering, on one hand, electrons are provided through doping of the Q element, the conductivity is optimized, on the other hand, due to a large amount of solid solution of multiple elements, the configuration entropy of the material is remarkably increased, the material becomes more stable, a single-phase material is obtained, and the performance of the thermoelectric material is improved. The non-harmony is remarkably enhanced by increasing the configuration entropy, so that the lattice thermal conductivity is greatly reduced; the thermoelectric performance of the bismuth telluride thermoelectric material disclosed by the invention is remarkably improved due to the synchronous optimization of the electrical and thermal transport characteristics.

Description

technical field [0001] The invention belongs to the technical field of energy materials, and relates to a thermoelectric material and a preparation method thereof, in particular to a bismuth telluride thermoelectric material based on entropy engineering and a preparation method thereof. Background technique [0002] Thermoelectric materials are new energy materials that can directly convert heat energy and electric energy. Its mechanism is based on the three thermoelectric conversion effects of Seebeck effect, Patel effect and Thomson effect. In the past few decades, due to the increasing attention to energy issues, the research on thermoelectric materials has entered a new stage. By connecting P-type and N-type semiconductor thermoelectric materials in series, thermoelectric refrigeration and power generation devices can be produced. Thermoelectric devices have many advantages such as no pollution, no noise, no moving parts, and no vibration. The conversion efficiency of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00C04B35/547C04B35/64C04B35/645H01L35/16H01L35/34
CPCC01B19/002C04B35/547C04B35/64C04B35/645C04B2235/666H10N10/852H10N10/01
Inventor 何佳清朱彬王江舵
Owner 深圳热电新能源科技有限公司
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