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1.55 [mu] m pulse laser and application thereof

A pulsed laser, dielectric film technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problem of low beam pulse repetition frequency, achieve high thermal conductivity, high scanning speed, and increase the amount of data.

Active Publication Date: 2022-04-19
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] This application provides an eye-safe 1.55 μm band micro-pulse laser with a repetition rate of hundreds of Hertz, a pulse energy of a hundred microjoules, and a pulse width of nanoseconds, which can solve the problem of pulse repetition of the detection beam of the existing laser rangefinder in this band. low frequency problem

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The pump source adopts a 976nm semiconductor laser in pulse mode, the pump pulse period is 10ms, and the pump pulse width is 2ms. The pump laser is focused into the gain medium through the focusing coupling mirror. The waist spot diameter of the pump laser in the gain medium is is 300 μm. Using the semiconductor laser end-pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7 The crystal was pumped with a peak incident power of 20W to obtain a 1.55μm micro-pulse laser with a repetition rate of 100Hz, a pulse energy of 120μJ and a pulse width of 2.1ns.

[0030] Adopt the steps described in this embodiment, can make 976nm semiconductor laser pump (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7 The crystal realizes 1.55μm band micro-pulse laser with 100Hz repetition frequency, 120μJ pulse energy and 2.1ns pulse width.

Embodiment 2

[0032] The pump pulse period of the 976nm semiconductor laser in Example 1 was adjusted to 5 ms, the pump pulse width was adjusted to 1 ms, and the waist spot diameter of the pump laser in the gain medium was adjusted to 300 μm. Using the semiconductor laser end-pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7The crystal was pumped with a peak incident power of 25W to obtain a 1.55μm micro-pulse laser with a repetition rate of 200Hz, a pulse energy of 100μJ and a pulse width of 2.3ns.

[0033] Adopt the steps described in this embodiment, can make 976nm semiconductor laser pump (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7 The crystal realizes 1.55μm band micro-pulse laser with 200Hz repetition frequency, 100μJ pulse energy and 2.3ns pulse width.

Embodiment 3

[0035] The pump pulse period of the 976nm semiconductor laser in Example 1 was adjusted to 20 ms, the pump pulse width was adjusted to 4.0 ms, and the waist spot diameter of the pump laser in the gain medium was adjusted to 200 μm. Using the semiconductor laser end-pumped (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7 The crystal was pumped with a peak incident power of 15W to obtain a 1.55μm band micro-pulse laser with a repetition rate of 50Hz, a pulse energy of 160μJ and a pulse width of 1.9ns.

[0036] Adopt the steps described in this embodiment, can make 976nm semiconductor laser pump (Er 0.005 Yb 0.05 Lu 0.945 ) 2 Si 2 o 7 The crystal realizes 1.55μm band micro-pulse laser with 50Hz repetition rate, 160μJ pulse energy and 1.9ns pulse width.

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Abstract

The invention discloses a 1.55 [mu] m wave band pulse laser, and the laser employs an (ErxYbyLu (1-x-y)) 2Si2O7 crystal as a gain medium, x = 0.3-2.0 at.%, and y = 3-20 at.%. The invention also discloses a light source of the laser range finder, and the light source is the 1.55 [mu] m pulse laser. The 1.55 [mu] m wave band micro pulse laser safe for human eyes has hundred Hertz-level repetition frequency, hundred microfocal-level pulse energy and nanosecond-level pulse width, and can solve the problem that the pulse repetition frequency of a detection light beam of an existing wave band laser range finder is low.

Description

technical field [0001] The application relates to a pulsed laser and its application, in particular to an eye-safe 1.55 μm band high-energy miniature pulsed laser, which belongs to the technical field of laser devices. Background technique [0002] The eye-safe 1.55μm band laser range finder is widely used in remote sensing, surveying and military fields. The laser rangefinder needs a miniaturized, low-cost and stable 1.55μm-band solid-state pulsed laser to output a detection beam. In order to accurately measure targets within a distance of several kilometers, pulsed lasers should have high pulse energy on the order of hundreds of microjoules, narrow pulse widths on the order of nanoseconds, and good beam quality. At present, using erbium-ytterbium double-doped phosphate glass as the gain medium can realize passive Q-switched micro-pulse laser with energy above 100 microjoules and width of several nanoseconds, and is widely used as the detection beam of the 1.55 μm band las...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/16
CPCH01S3/1608H01S3/1618H01S3/1655H01S3/1603Y02A90/10
Inventor 陈雨金黄艺东黄建华林炎富龚兴红
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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