Device for preparing carbon-doped chemical vapor deposition tungsten coating

Abstract

The invention relates to the technical field of chemical vapor deposition, in particular to a carbon-doped chemical vapor deposition tungsten coating device which comprises an activation recovery furnace and a deposition furnace which are communicated with each other, and an activation area and a tail gas recovery area on the peripheral side of the activation area are arranged in the activation recovery furnace; one end of the activation area is connected with a first air inlet pipe, and the other end of the activation area is connected with the air inlet end of the deposition furnace through an activation pipeline; one end of the tail gas recovery area is connected with a recovery pipeline and a fourth gas inlet pipe, the other end of the tail gas recovery area is connected with a tail gas treatment mechanism, and the recovery pipeline is connected with the exhaust end of the deposition furnace; a gas mixing device and a deposition platform are arranged in the deposition furnace; the gas mixing device is respectively connected with the activation pipeline, the second gas inlet pipe and the third gas inlet pipe; heating devices are arranged in the activation recovery furnace and the deposition furnace, under the action of the heating devices, gas activation or tail gas recovery is performed in the activation recovery furnace, and coating deposition is performed in the deposition furnace, so that the reaction cost and loss are reduced.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a device for carbon-doped chemical vapor deposition of a tungsten coating. Background technique [0002] Chemical vapor deposition is a gas phase growth method for preparing materials. It is to pass one or several compounds containing thin film elements and elemental gas into the reaction chamber where the substrate is placed, and deposit a solid state on the surface of the substrate by means of a space gas phase chemical reaction. Thin film technology. [0003] In chemical vapor deposition coating devices, there are usually structures such as raw material gas preheating zone, coating deposition zone and tail gas waste heat recovery zone, such as the chemical vapor deposition method coating device disclosed in Chinese patent application (publication number is CN202214415U), Including the reaction furnace, the reaction furnace is equipped with a support cylinder...

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Problems solved by technology

[0004] However, the existing chemical vapor deposition coating devices are usually suitable for conventional thermal chemical vapor deposition processes, and are not fully applicable to specific chemical vapor deposition processes. For example, for the use of WF 6 、H 2 And the process of preparing carbon-doped chemical vapor deposition tungsten materials with carbon source gas as raw material requires that the carbon source gas needs to be preheated and activated separately, while the existing chemical vapor deposition coating device can only achieve common preheating of mixed gases , which may cause the reaction to form a coating in the non-deposition reaction area, resulting in the loss of raw materials. At the same time, the coating in the reaction device needs to be cleaned regularly, which is not only difficult to maintain but also increases maintenance costs.

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