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Perovskite light emitting diode device, preparation method thereof and display device

A light-emitting diode and perovskite technology, which is applied in the field of perovskite light-emitting diode devices, preparation methods and display devices, can solve the problems of cover leakage of passivation materials, affect device performance, accelerate ion migration, etc., and achieve high-efficiency calcium The effect of titanium ore luminous efficiency, improving injection efficiency, and improving the degree of delocalization

Pending Publication Date: 2022-04-05
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, these defect states will affect the charge injection and affect the device performance
On the other hand, interface defects can accelerate ion migration and affect the stability
As a commonly used passivation material, fullerene derivatives (PCBM) have problems such as coverage or leakage, which need to be improved urgently.

Method used

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  • Perovskite light emitting diode device, preparation method thereof and display device
  • Perovskite light emitting diode device, preparation method thereof and display device
  • Perovskite light emitting diode device, preparation method thereof and display device

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Embodiment Construction

[0048] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application. In addition, it should be understood that the specific implementations described here are only used to illustrate and explain the present application, and are not intended to limit the present application. In this application, unless stated to the contrary, the used orientation words such as "up" and "down" usually refer to up and down in the actual use or working state of the device, specifically the direction of the drawing in the drawings ; while "inside" and "outside" refer to the outline of ...

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Abstract

The invention discloses a perovskite light emitting diode device, a preparation method thereof and a display device. The perovskite light emitting diode device includes: a first electrode; a second electrode; the perovskite light-emitting layer is arranged between the first electrode and the second electrode; the electron transport layer is arranged between the perovskite light-emitting layer and the second electrode; wherein the material of the electron transport layer comprises pyridine doped graphdiyne and a fullerene derivative. According to the perovskite light-emitting diode device, the electron transport layer is formed by matching the pyridine doped graphdiyne and the fullerene derivative, so that the interface defect of perovskite can be effectively passivated, the leakage current of the device can be effectively inhibited, the electron injection efficiency can be improved, and the high perovskite light-emitting efficiency can be realized.

Description

technical field [0001] The present application relates to the field of display technology, in particular to a perovskite light-emitting diode device, a preparation method thereof, and a display device. Background technique [0002] In recent years, through component optimization, interface modification, carrier transport layer optimization and structural design, the performance of optoelectronic devices based on perovskite materials has been improved year by year, and high-resolution calcium Titanium optoelectronic devices are regarded as a powerful application of optoelectronic devices. [0003] The interfacial properties of perovskites have a significant impact on device performance. On the one hand, these defect states will affect the charge injection and affect the device performance. On the other hand, interface defects can accelerate ion migration and affect stability. As a commonly used passivation material, fullerene derivatives (PCBM) have problems such as covera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
Inventor 陈学彬
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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