Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method

A technology of crystalline silicon solar cells and diodes, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems that the output power of photovoltaic modules is greatly affected and diodes cannot be integrated, so as to reduce leakage and heat generation, reduce output power and Safety impact, effect of reducing temperature rise

Active Publication Date: 2022-03-01
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the way of connecting batteries in series requires that the output current of each battery be the same, that is, under the premise of the same solar battery quality, the light is uniform. If the light of one battery is blocked, the whole module will output at the low current of this battery. Therefore, Existing diodes cannot be integrated into photovoltaic modules. Shading and uneven light have a great impact on the output power of photovoltaic modules. How to ensure the output power of photovoltaic modules on the basis of integrated protection diodes has become a technical problem that needs to be solved urgently

Method used

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  • Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method
  • Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method
  • Integrated structure of graphene bypass diode and crystalline silicon solar cell and preparation method

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preparation example Construction

[0061] The invention also discloses a method for preparing an integrated structure of a graphene bypass diode and a crystalline silicon solar cell, comprising:

[0062] Preparation of p on n-type silicon base region + type crystalline silicon emitter;

[0063] Prepare n on the backlight surface of the n-type silicon base region + silicon doped region;

[0064] in n + Isolation grooves are prepared on the silicon-doped region;

[0065] in n + A passivation layer is prepared on the silicon-doped region, and a backlight electrode window and a target window are opened on the passivation layer;

[0066] Transfer the graphene film layer on the target window, bake it with n + The silicon-doped region forms a Schottky junction;

[0067] Prepare a graphene surface electrode on the backlight surface of the graphene film layer;

[0068] Prepare the backlight electrode on the backlight electrode window;

[0069] in p + The light-facing electrode is prepared on the emitter region...

Embodiment 1

[0091] In this embodiment, a method for preparing an integrated structure of a graphene bypass diode and a crystalline silicon solar cell is provided, including the following steps:

[0092] Such as figure 2 As shown in figure (a) in the middle, an n-type silicon wafer that has been cleaned and textured by a conventional process is provided as the n-type silicon base region 01 .

[0093] Such as figure 2 As shown in the figure (b), the front side of the n-type silicon wafer is subjected to a conventional boron diffusion process to form a p + For the crystalline silicon emission area 02, a conventional polishing process is performed on the backlight surface of the silicon wafer.

[0094] Such as figure 2 As shown in (c) figure, the phosphor paste is screen-printed on the back side of the silicon wafer to form n + Silicon heavily doped region 03.

[0095] Such as figure 2 As shown in (d) and (e), a laser is used to isolate an isolation region 10 with an area of ​​5 cm ...

Embodiment 2

[0101] The graphene diode wire connection and the integrated structure of the graphene bypass diode and the crystalline silicon solar cell described before and after form a topological structure such as Figure 3-4 shown.

[0102]In this embodiment, the way of connecting the crystalline silicon solar cells in series is as follows: the light-facing electrode 09 of the 1# crystalline silicon solar cell is connected to the back-light electrode 07 of the 2# crystalline silicon solar cell, and the 2# crystalline silicon solar cell The light-facing electrode 09 is connected to the back-light electrode 07 of the 3# crystalline silicon solar cell.

[0103] In this embodiment, the connection mode of the graphene bypass diode is: the backlight surface electrode 07 of the 1# crystalline silicon solar cell is connected to the graphene surface electrode 08 of the 2# crystalline silicon solar cell. That is, the n-type region of 2# graphene diode (ie n + The heavily doped silicon region (0...

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Abstract

The invention discloses an integrated structure of a graphene bypass diode and a crystalline silicon solar cell and a preparation method. The integrated structure comprises an n-type silicon base region, a p + type crystalline silicon emission region, an n + silicon doping region, an isolation groove, a passivation layer, a backlight surface electrode, a graphene film layer, a graphene surface electrode and a light-facing surface electrode. According to the invention, the graphene bypass diode is integrated with the solar cells, so that each solar cell is protected by the bypass diode under the condition of not influencing assembly packaging; the graphene diode is separated from the solar cell through laser scribing, so that the phenomena of electric leakage and heating at the junction of the bypass diode and the solar cell can be effectively reduced; the photovoltaic module formed by the solar cells adopting the technology can greatly reduce the influence of current loss on the output power and safety of the module.

Description

technical field [0001] The invention belongs to the technical field of renewable energy, and relates to an integrated structure and a preparation method of a graphene bypass diode and a crystalline silicon solar cell. Background technique [0002] Conventional reverse protection diodes are power electronic devices with high withstand voltage, good rectification characteristics, and large forward current. They are generally made of small semiconductor dies and metal packages, and the outer shape is columnar or block. Due to the high cost and the inability to integrate with solar cells in appearance, currently the cells (about 60 cells) of each cell module are divided into 3 groups, and 3 reverse diodes are installed through the backplane to protect the cells in the module. However, the low open circuit voltage of solar cells needs to be connected in series to form modules, so the modules are extremely sensitive to shadows and uneven light. [0003] In order to reduce the imp...

Claims

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Application Information

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IPC IPC(8): H01L31/0443H01L31/068H01L31/18
CPCH01L31/0443H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 任慧雪韩培德
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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