Forming method of semiconductor structure

Abstract

A forming method of a semiconductor structure comprises: providing an initial substrate, the initial substrate comprising a first region, and the initial substrate in the first region being provided with a plurality of initial first fin parts which are separated from one another; forming a second strain fin part on the side wall surface of the initial first fin part in the first region; taking the second strain fin parts as masks, etching the initial substrate and the initial first fin parts on the first region to form a substrate and second ineffective fin parts located between the substrate in the first region and the second strain fin parts, and forming an isolation opening extending into the second invalid fin part between the adjacent second strain fin parts on each second ineffective fin part, to form the semiconductor structure with the strained fin parts. The process for forming the strained fin parts and the material of the strained fin parts can be selected more freely, the integration level of the semiconductor structure is improved, and electric insulation is achieved between adjacent strained fin parts and between the strained fin parts and other semiconductor devices.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] In the prior art, in order to overcome the short channel effect, a three-dimensional device structure of a fin field effect transistor is proposed. The fin field effect transistor is a transistor with a fin channel structure, and the fin field effect transistor utilizes several The surface acts as a channel, which prevents short-channel effects in conventional transistors and increases operating current. [0003] However, as the semiconductor industry pursues higher device density, the critical dimensions of the existing fin-type channel structure need to be further reduced, thus, the size of the fin-type channel is also reduced, resulting in the operating current of the fin field effect transistor Reduced, unable to meet device performance requirements. In order to increase the operating cu...

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Problems solved by technology

[0003] However, as the semiconductor industry pursues higher device density, the critical dimensions of the existing fin-type channel structure need to be further reduced, thus, the size of the fin-type channel is also reduced, resulting in the operating current of the fin-type field effect transistor Reduced, unable to meet device performance requirements

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