Preparation method of nano metal oxide

Abstract

The invention provides a preparation method of a novel nano metal oxide. The preparation method comprises the step of treating a mixture comprising a metal simple substance, water and an organic solvent by using ultrasonic waves. The preparation process and equipment requirements are simple, the material cost is low, experimental parameters are few, experimental conditions are mild, a heat source and / or pressure do not need to be additionally applied, the nano-scale metal oxide of the kilogram level or above can be rapidly prepared at the environment temperature and the environment pressure, and the preparation method is suitable for industrial large-scale production.

Description

technical field [0001] The invention belongs to the technical field of nanometer metal oxide preparation and relates to a novel preparation method of nanometer metal oxide. Background technique [0002] Nanoscale metal oxides hold great promise in practical applications due to their unique physical and chemical properties, such as high-efficiency catalysts, batteries, semiconductor devices, supercapacitors, energy storage, and magnetic and optical devices. In the scientific research of nano-metal oxide materials, the synthesis of nano-metal oxides is extremely important, and the different synthesis methods have a great impact on the microstructure and properties of nano-metal oxides. [0003] Traditional synthesis methods of nanometer metal oxides include hydrothermal method, solvothermal method, polyol method, template method, chemical vapor deposition method and electrochemical synthesis method. However, these methods usually need to be completed in a high-temperature and...

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Problems solved by technology

However, these methods usually need to be completed in a high-temperature and / or high-pressure process, and take a long time, such as the preparation method of gallium oxide nanorods disclosed in patent application CN108821331A: the metal gallium and the substrate are heated to 1100-1200 After ℃, argon and oxygen are introduced, kept warm for 1-2h, cooled, washed and dried to obtain gallium oxide nanorods; another example is the preparation method of large-size single crystal β-gallium oxide nanoribbons disclosed in patent application CN109881246A: Coating a thin catalytic layer on the thin film; place the gallium nitride thin film in chemical vapor deposition equipment, pass through the purge gas, and form catalytic particles on the surface of the gallium nitride thin film by annealing (500 ° C ~ 900 ° C); (1000°C~1250°C), forming gallium nitride nanoseed crystals wrapped with catalytic particles on the gallium nitride film; growing large-sized single crystal gallium oxide nanobelts in a low oxygen and high temperature environment (1000°C~1250°C)

These preparation methods all need to be carried out at high temperature, and the yield of the prepared product is small, which is not suitable for large-scale commercial production and has great limitations.

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