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Surface channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) for wireless weak energy collection and preparation method thereof

An energy harvesting, surface channel technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of low rectification efficiency of wireless energy harvesting systems, achieve low threshold voltage, high channel mobility, Novel effect of the scheme

Pending Publication Date: 2022-01-04
XIDIAN UNIV
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0005] The embodiment of the present invention provides a surface channel MOSFET for wireless weak energy harvesting and its preparation method, which is used to solve the problem of low rectification efficiency in the n-MOSFET 2.45G weak energy density wireless energy harvesting system in the prior art

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  • Surface channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) for wireless weak energy collection and preparation method thereof
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  • Surface channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) for wireless weak energy collection and preparation method thereof

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Embodiment Construction

[0037] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0038] In the prior art, the core components of the rectifier circuit in microwave wireless energy receiving systems usually use SBDs with better high-frequency characteristics and switching performance, but microwave wireless energy receiving systems based on SBDs have low rectification efficiency and are not compatible with SiCMOS technology. question. Compared with SBD, the n-MOSFET connected in the form of a diode not only has the rectification capability ...

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Abstract

The invention discloses a surface channel MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) for wireless weak energy collection and a preparation method of the surface channel MOSFET, a microwave wireless energy collection system is accessed in a new wiring mode, a strain Si material is used as a channel material of the MOSFET, low threshold voltage and high channel mobility are realized, the rectification efficiency is improved, the product and the method are novel, the device integration level is high, and the process cost is low.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuits, in particular to a surface channel MOSFET for wireless weak energy collection and a preparation method thereof. Background technique [0002] There are a large number of 2.45G radio frequency (Radio Frequency, RF) weak energy signals distributed in the environment of our country. If the microwave wireless energy receiving system is used to collect these RF signals and convert them into direct current (Direct Current, DC) output for load energy supply, in the Internet of Things And other fields will have important application value. [0003] However, due to the weak energy of the RF radio frequency signal, the rectification efficiency of the microwave wireless energy receiving system is low when converting RF to DC, which limits the development and application of related technologies. In order to improve rectification efficiency, the researchers proposed SBD (Schottky Ba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/786H01L21/336
CPCH01L29/7842H01L29/78651H01L29/66742
Inventor 刘伟峰张栋宋建军
Owner XIDIAN UNIV
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