Terahertz detector based on phase characteristics of exciton insulator and its preparation method
A technology of terahertz detectors and insulators, applied in the field of terahertz detectors, can solve problems such as low sensitivity, inability to meet terahertz technology, slow response speed, etc., and achieve the effect of wide-spectrum detection and high-sensitivity detection
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[0043] ginseng figure 2 As shown, the present invention also discloses a preparation method of a terahertz detector based on the phase characteristics of an excitonic insulator, including:
[0044] S1. Provide substrate;
[0045] S2, preparing an oxide layer on the substrate by a thermal oxidation method;
[0046] S3, preparing a tantalum-nickel-selenium channel layer on the oxide layer;
[0047] S4. Prepare an electrode layer on part of the oxide layer and part of the tantalum-nickel-selenide channel layer.
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