FinFET integrated circuit basic unit

Abstract

The invention discloses a FinFET integrated circuit basic unit, which relates to the field of microelectronic technology and integrated circuits. The basic unit is of a multi-layer structure, the lowermost layer is a low-doped well region, and the low-doped well region comprises a bottom layer and ridge-shaped protrusions on the bottom layer; isolation layers are arranged on the two sides of the ridge-shaped protrusions, and the upper surfaces of the isolation layers are flush with the upper surfaces of the ridge-shaped protrusions of the low-doped well region; a drain semiconductor region, a lightly-doped drain region, a channel semiconductor region, a lightly-doped source region and a source semiconductor region are sequentially arranged along the upper surface of the ridge-shaped bulge of the lightly-doped well region, and the two side surfaces and the upper surface of the drain semiconductor region are flush with each other; gate electrodes are arranged on the two side faces and the upper surface of the channel semiconductor region, and a gate dielectric layer is arranged between the gate electrodes and the channel semiconductor region for isolation. The dielectric constants of the gate oxide layers wrapping the channel region and the N-doped region are different, and a material with a relatively large dielectric constant can be adopted in the N-region, so that the accumulation effect of multiple carriers on the surface of the N-region can be improved, the on-resistance of the N-region can be reduced, and the on-current can be increased.

Description

technical field [0001] The invention relates to microelectronic technology and integrated circuit technology, in particular to a fin field effect transistor. Background technique [0002] According to the opinion of authoritative international organizations, Moore's Law has obviously slowed down and will stop in the near future. Therefore, people have been talking about "Beyond Moore", and it seems that the era of a new generation of semiconductors will come soon. [0003] Since the birth of IC, the development of IC has been following Moore's Law for decades. However, the progress of IC chips has encountered a bottleneck in recent years. In the future, the speed of Moore's Law will be slower and slower, and the channel length Lch of the transistor will shrink slowly until it reaches 9.6nm, and the shrinking will stop. [0004] As the channel length Lch of the transistor shrinks, there are some problems to be solved: [0005] 1. The most important parameter of Moore's La...

AI Technical Summary

Problems solved by technology

[0006]2. Another reason why Lch cannot be reduced is the leakage-induced barrier lowering (DIBL) effect

As a result, the reduction of their MOSFET channel length is limited

[0007]3. One of the important reasons why Lch cannot be reduced is the high field effect

In terms of the withstand voltage area of ​​the device, FinFET and GAAFET are no different from traditional MOSFETs

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