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Schottky gate field effect transistor based on two-dimensional size cutting and preparation method thereof

A field-effect transistor and Schottky gate technology, applied in the field of microelectronics, can solve problems such as lattice mismatch and increase process flow, achieve high reliability, simple process, and avoid random fluctuations

Pending Publication Date: 2021-12-21
HUNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the traditional silicon-based doping process is not suitable for ultra-thin two-dimensional materials. So far, how to eliminate the random dopant fluctuations brought about by the doping process is still a challenge in the process of device miniaturization.
[0003] A variety of solutions have been proposed in the prior art, such as using two different types of materials to prepare Schottky gate transistors by doping. In this solution, it is inevitable to introduce doping processes and technologies, because different materials grow The growth conditions of the process are different, which increases the process flow, and the direct lattice of different materials may cause lattice mismatch problems

Method used

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  • Schottky gate field effect transistor based on two-dimensional size cutting and preparation method thereof
  • Schottky gate field effect transistor based on two-dimensional size cutting and preparation method thereof
  • Schottky gate field effect transistor based on two-dimensional size cutting and preparation method thereof

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Effect test

Embodiment 1

[0020] First, the structure of the Schottky gate field effect transistor in the present invention is introduced. refer to Figure 1A , 1B , which includes a substrate. In order to facilitate the distinction from other subsequent substrates, this substrate is referred to as the first substrate 1 herein. The first substrate 1 can be, for example, a sapphire substrate. Of course, for those skilled in the art Other types of substrates can also be used, and the present invention does not limit the types of substrates.

[0021] A two-dimensional material nanoribbon 2 is formed on a substrate 1 , and a bulk film 3 is located above the nanoribbon 2 and intersects with the nanoribbon 2 , for example, may be a cross. In FIG. 1 , the nanobelt 2 is in direct contact with the substrate 1 , and the bulk film 3 covers part of the nanobelt 2 and is perpendicular to the nanobelt 2 . The nanobelt 2 and the bulk film 3 are connected by intermolecular forces.

[0022] Metal electrodes 4 are fo...

Embodiment 2

[0027] This embodiment mainly introduces a manufacturing method of a Schottky gate field effect transistor, wherein the Schottky gate field effect transistor has the structure in Embodiment 1. The following will combine Figure 2A to Figure 5 The method in this embodiment is described in detail, which generally includes the following steps S1-S6.

[0028] S1: forming a two-dimensional material thin film 5 on the first substrate 1 .

[0029] refer to Figure 2A and Figure 2B ,in Figure 2B for Figure 2A Sectional view along A-A direction. The first substrate 1 can be a sapphire substrate, and the two-dimensional material thin film 5 can be selected as a molybdenum disulfide thin film. For example, the sapphire with single-side polishing on the upper surface is selected as the sapphire substrate, and the mechanically peeled-off sapphire substrate is prepared on the sapphire substrate. A molybdenum disulfide thin film with a thickness of 1-20nm is used to obtain the first...

Embodiment 3

[0049] This embodiment focuses on the differences from other embodiments, and the similarities will not be repeated. refer to Figure 6 , different from the structure in Embodiment 1, in this embodiment a bulk film 3 is formed on the first substrate 1, and the two-dimensional material nanoribbon 2 is located above the bulk film 3 and intersects with the bulk film 3, for example, It's a cross. In FIG. 1 , the bulk film 3 is in direct contact with the substrate 1 , and the nanobelt 2 covers part of the bulk film 3 and is perpendicular to the bulk film 3 . The nanobelt 2 and the bulk film 3 are connected by intermolecular forces.

[0050] Same as Example 1, metal electrodes 4 are formed at both ends of the nanobelt 2 and the bulk film 3, and the same two-dimensional material can be used for the nanobelt 2 and the bulk film 3, for example, molybdenum disulfide can be used for both.

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Abstract

The invention discloses a Schottky gate field effect transistor based on two-dimensional size cutting. TheSchottky gate field effect transistor comprises a substrate, a block-shaped film and a nanobelt are formed on the substrate in a crossed manner, the nanobelt and the block-shaped film are made of the same two-dimensional material, a homojunction made of the same material is formed at the intersection of the nanobelt and the block-shaped film, and metal electrodes are formed at the two ends of the nanobelt and the two ends of the block-shaped film. The physical size of the two-dimensional material is cut through plasma etching, the Schottky gate field effect transistor with the blocky molybdenum disulfide thin film serving as the gate and the molybdenum disulfide nanobelt serving as the carrier transport layer is built through the Schottky structure formed by homojunctions, and the Schottky gate field effect transistor is excellent in performance, easy to operate and high in controllability.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a Schottky gate field-effect transistor based on two-dimensional size cutting and a preparation method thereof. Background technique [0002] In recent years, two-dimensional materials (such as boron nitride (BN), molybdenum disulfide (MoS 2 ), tungsten disulfide (WS 2 ), etc.) provide a new solution for the manufacture of ultra-thin high-performance transistors and logic electronic devices due to their own atomic thickness properties. However, the traditional silicon-based doping process is not suitable for ultra-thin two-dimensional materials. So far, how to eliminate the random dopant fluctuations brought about by the doping process is still a challenge in the process of device miniaturization. [0003] A variety of solutions have been proposed in the prior art, such as using two different types of materials to prepare Schottky gate transistors by doping...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/812H01L21/34
CPCH01L29/812H01L21/34H01L29/66969
Inventor 刘兴强廖蕾段鑫沛林均张明亮
Owner HUNAN UNIV
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