A kind of wafer plasma cutting protective liquid and its preparation method and use

A technology of plasma and protective liquid, which is applied in the manufacture of semiconductor/solid-state devices, polyether coatings, coatings, etc., can solve the problems of not being able to apply plasma cutting environments, etc., and achieve improved glass transition temperature, low thermal weight loss, and intermolecular interactions powerful effect

Active Publication Date: 2022-03-25
ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The current plasma cutting protective fluid for wafers can improve the cutting efficiency and stability of wafers to a certain extent, avoid chips or cracks, and thermal stress problems, but there is a problem that it cannot be applied to the plasma cutting environment under high working temperature conditions.

Method used

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  • A kind of wafer plasma cutting protective liquid and its preparation method and use
  • A kind of wafer plasma cutting protective liquid and its preparation method and use
  • A kind of wafer plasma cutting protective liquid and its preparation method and use

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035]With the total mass percentage being 100%wt, the following components were weighed in mass percentage: 1%wt polyethylene oxide with a molecular weight of 100,000 and 4%wt polyacrylic acid with a molecular weight of 5 million, 0.1%wt polyacrylic acid Oxyethylene alkylphenol ether, 0.1%wt polydimethylsiloxane, 0.1%wt2,2,6,6-tetramethylpiperidine, 10%wt absolute ethanol, 84.7%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm at room temperature for 1 hour until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S1, and the above naming rules were used in subsequent examples.

Embodiment 2

[0037] With the total mass percentage being 100%wt, the following components were weighed in mass percentage: 10%wt polyethylene oxide with a molecular weight of 100,000 and 25%wt polyacrylic acid with a molecular weight of 5 million, 1%wt polyacrylic acid Oxyethylene alkylphenol ether, 0.1%wt GPES type defoamer, 1%wt2,2,6,6-tetramethylpiperidine, 10%wt isopropanol, 52.9%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm for 1 hour at room temperature until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S2.

Embodiment 3

[0039] Taking the total mass percentage as 100%wt, weigh the following components in mass percentage respectively: 2%wt polyethylene oxide with a molecular weight of 100,000 and 8%wt polyethylene oxide with a molecular weight of 5 million, 0.5%wt Polyoxyethylene alkylphenol ether, 1.0%wt fatty acid ester, 0.5%wt2,2,6,6-tetramethylpiperidine, 10%wt ethylene glycol butyl ether, 78%wt water. The material was put into a mixer, and stirred at a speed of 500 rpm for 1 hour at room temperature until uniform and transparent, and a wafer plasma cutting protection solution was prepared, which was named S3.

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Abstract

The invention provides a wafer plasma cutting protective solution, a preparation method and application thereof. The protective solution for wafer plasma cutting of the present invention comprises the following components by weight: 5-40 parts of water-soluble resin; 0.1-2 parts of wetting agent; 0.1-2 parts of defoaming agent; 0.1-2 parts of free radical scavenger ; 5-20 parts of organic solvent; 34-89.7 parts of water. The wafer plasma cutting protective liquid of the invention can quickly form a film on the wafer surface, and has good heat resistance and removability. Using the protection liquid of the present invention during wafer processing can effectively avoid the deposition of condensed silicon vapor or other debris generated during processing on the chip surface; meanwhile, the protection liquid for plasma cutting of wafers of the present invention has high thermal stability , It can avoid the direct exposure of the wafer surface to the external environment due to the thermal effect of laser cutting or the decomposition of the protective film when plasma cutting is performed at a higher working temperature, effectively improving the reliability and yield of the product.

Description

technical field [0001] The invention relates to chip manufacturing technology, in particular to a wafer plasma cutting protection liquid and its preparation method and application. Background technique [0002] Wafer refers to the silicon wafer used in the production of silicon semiconductor integrated circuits. Wafer cutting is the key process of integrated circuit packaging. If the reliability of the wafer surface cannot be improved during the dicing process, it will have a great impact on the subsequent process, thereby reducing the yield rate of chip production. [0003] Although the current wafer cutting has evolved from simple blade cutting to laser cutting and plasma cutting, when the laser irradiates and cuts along the cutting road of the wafer, the heat energy generated is easily absorbed by the wafer. It is easy to cause silicon to melt or thermally decompose, generate silicon vapor to condense and deposit on the wafer, and cause chips to be generated around the e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09D133/00C09D171/02C09D7/65C09D7/20H01L21/683H01L21/78
CPCC09D133/00C09D171/02C09D7/65C09D7/20H01L21/6836H01L21/78H01L2221/68336H01L2221/6834C08L2201/08C08L2205/025C08L2205/035C08L71/02
Inventor 侯军贺剑锋
Owner ZHEJIANG AUFIRST MATERIAL TECH CO LTD
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