Substrate bearing combined multilayer film on surface, X-ray detector and preparation method of X-ray detector

Abstract

The invention discloses a substrate bearing a combined multilayer film on the surface, an X-ray detector and a preparation method of the X-ray detector, and relates to the field of oxide photoelectric functional film materials. The combined multi-layer film is a multi-layer film formed by laminating repetitive units composed of PbO layers and Ga2O3 layers in a repetitive frequency. According to the invention, the PbO layers and the Ga2O3 layers are combined, strong absorption of X-ray photons is realized by means of the PbO layers, the material thickness of the X-ray detector is reduced, ultra-low leakage current is realized by means of the Ga2O3 layers, strong absorption of the X-ray photons is realized and the material thickness of the X-ray detector is reduced at the same time by combining multiple layers of films, and an ultra-low leakage current index is achieved. The combined multi-layer film simultaneously meets the deposition application of a temperature-sensitive substrate material.

Description

technical field [0001] The invention relates to the field of oxide photoelectric functional film materials, in particular to a substrate with a combined multilayer film on its surface, an X-ray detector and a preparation method thereof. Background technique [0002] X-ray detector is a very important non-destructive imaging device in the fields of industry, medical treatment and security inspection. It converts X-ray photons into electrical signals, and directly obtains digital images through computer and corresponding software control. [0003] An existing class of devices uses scintillators (such as CsI:Tl, NaI, etc.) to convert X photons into visible light, and then converts visible light into electrical signals by silicon photodiodes, and controls the electrical signals of photodiodes by matrix thin film transistors. Readout to realize large-scale detection imaging, which is the earliest developed type of digital X-ray detection imaging device. The photoelectric convers...

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Problems solved by technology

[0009] The inventors have concluded that: the current preparation of oxide photoelectric functional film materials has the following defects: (1) The preparation of the amorphous lead oxide layer adopts the facing target deposition technology and kW-level plasma assistance, which increases the complexity of the equipment system and At the same time, high-power plasma will also cause damage to the substrate, and ion bombardment will cause the temperature of the substrate to rise, which is very unfavorable for temperature-sensitive substrate materials; (2) The leakage current density of the lead oxide layer is higher than that of direct conversion X-rays The technical index of the detector, which will limit the sensitivity, dynamic range and image quality of the device, and also cause great trouble to the readout and signal processing of the electrical signal; (3) Ga 2 o 3 The X-ray blocking absorption ability of the film layer is weak, and to meet the needs of practical applications, Ga 2 o 3 The thickness of the material layer should be on the order of hundreds of microns to millimeters

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