Immersion type phosphide synthesis and growth device under magnetic field
A growth device and immersion technology, which is applied in the field of semiconductor material preparation, can solve the problems of high equipment and process requirements, and achieve the effects of inhibiting melt convection, inhibiting the floating rate of bubbles, and stabilizing the synthesis process
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[0020] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.
[0021] see figure 1 , an immersion-type phosphide synthesis and growth device under a magnetic field, a main furnace body 1, an upper furnace cover 2, and a furnace chassis 3 form a crystal growth space, and a crucible 7 is provided in the space, supporting a crucible support 19, a lower insulation layer 14, and a crucible rod 20 and crucible rod drive 21. A heater and an insulating layer are arranged on the periphery of the crucible 7 .
[0022] see figure 2 , the injection synthesis system 5 in the main furnace body 1 has a synthesis body rod 5-1, and 3-5 disc-shaped shielding layers are arranged at the upper end of the synthesis body rod 5-1. The closer the edge of the shielding layer is to the inner wall of the crucible, the better. In order not to affect the up and down movement of the injection synthesis system 5 in the crucible, in th...
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