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Method for treating surface defects of copper-clad ceramic substrate

A technology of copper-clad ceramic substrate and defect treatment, which is applied in the direction of grinding machine parts, grinders, electrical components, etc., can solve the problems of reducing the surface line and weldability, unable to eliminate wrinkles, pimples, and poor appearance of pimples.

Inactive Publication Date: 2021-09-28
江苏富乐华半导体科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing sintering process cannot effectively eliminate wrinkles and pimples
[0003] Wrinkled skin and pimples not only have a bad appearance, but also reduce surface bonding and solderability

Method used

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  • Method for treating surface defects of copper-clad ceramic substrate
  • Method for treating surface defects of copper-clad ceramic substrate
  • Method for treating surface defects of copper-clad ceramic substrate

Examples

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specific Embodiment 1

[0033] Specific embodiment 1: see Figure 1 to Figure 4 , a method for treating surface defects of a copper-clad ceramic substrate, comprising the following steps:

[0034] Step 1, the copper-clad ceramic substrate 2 is fed, and conveyed by the belt 1, the transmission speed of the belt 1 is 0.8-1.0m / min, and the brush surface to be thrown is facing upward;

[0035] Step 2, the copper-clad ceramic substrate 2 is ground through the grinding section; the grinding section is provided with a ceramic brush roll 3 and a non-woven brush roll 4; the speed of the brush rolls is 1800-2200 rad / min.

[0036] The mesh number of ceramic brush roller 3 is 400 mesh, and the mesh number of nonwoven brush roller 4 is 400 mesh.

[0037] In the second step, the electric current of the ceramic brush roller is 0.4A-1.4A, and the electric current of the non-woven brush roller is 0.8A-1.8A.

[0038] The thinning amount in step 2 is 8-12 μm;

[0039] Step 3: Brushing the copper-clad ceramic substra...

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Abstract

The invention relates to the technical field of semiconductors. The method for treating surface defects of a copper-clad ceramic substrate comprises the following steps that: 1, the copper-clad ceramic substrate is fed and conveyed through a belt, and the surface needing to be polished and brushed faces upwards; 2, the copper-clad ceramic substrate is ground through a grinding section, wherein the grinding section is provided with a ceramic brush roller and a non-woven fabric brush roller; 3, the copper-coated ceramic substrate passes through a polishing and brushing section to be polished and brushed, and the polishing and brushing section is provided with at least two non-woven fabric brush rollers; 4, the copper-coated ceramic substrate passes through a washing section, ground, polished and brushed copper powder is washed away through spraying and washing, and the copper powder is recycled through a copper powder recycling machine; and 5, the copper-clad ceramic substrate passes through a drying section. The copper surface defects (such as lumps, wrinkles and the like) can be effectively removed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a preparation method of an aluminum nitride aluminum-clad ceramic liner. Background technique [0002] The surface of the existing copper-clad ceramic substrate sintered at high temperature is easy to form wrinkles and bumps. Since sintering takes place in an open mesh belt tunnel furnace, the atmosphere in the sintering furnace changes and the particles in the sintering furnace fall onto the copper surface and solidify on the surface of the product after sintering. The existing sintering process cannot effectively and completely eliminate wrinkles and pimples. [0003] Wrinkled skin and pimples not only have a bad appearance, but also reduce surface bonding and solderability. [0004] A new copper surface treatment method is needed to remove wrinkles and bumps on the substrate surface. Contents of the invention [0005] Aiming at the problems existing in the prior ar...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05K3/02H05K3/00B24B1/00B24B27/00B24B41/00B24B41/047
CPCH05K3/022H05K3/0044B24B1/00B24B27/0023B24B41/005B24B41/047
Inventor 李炎贺贤汉陆玉龙陈元华马敬伟
Owner 江苏富乐华半导体科技股份有限公司
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