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Preparation method of silicon-phosphorus alloy

A technology of silicon-phosphorus alloy and red phosphorus, which is applied in the field of preparation of silicon-phosphorus alloy, can solve the problems of low alloy purity and low phosphorus content

Pending Publication Date: 2021-09-10
如皋市化合物半导体产业研究所
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for preparing a silicon-phosphorus alloy, which can solve the problems of low phosphorus content and low alloy purity in the silicon-phosphorus alloy in the prior art

Method used

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  • Preparation method of silicon-phosphorus alloy
  • Preparation method of silicon-phosphorus alloy
  • Preparation method of silicon-phosphorus alloy

Examples

Experimental program
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Embodiment 1

[0053] A method for preparing a silicon-phosphorus alloy, comprising the steps of:

[0054] 1) Prepare 1 quartz tube 10, 2 quartz boats 50, 8-9 quartz blocks 40 and 1 quartz cap 20, soak all the above-mentioned quartz products in aqua regia, rinse them with deionized water and ventilate them. Dry in the cupboard.

[0055] 2) Weigh 400 g of the high-purity silicon element 60 and 430 g of the high-purity red phosphorus element 70.

[0056] 3) The silicon element 60 and the red phosphorus element 70 weighed are respectively placed in two cleaned and dried quartz boats 50, and the quartz boat 50 equipped with the silicon element 60 is placed in the quartz tube 10 near the closed end. 8 pieces of quartz blocks 40 are placed in the middle of the quartz tube 10 in sequence, and then the quartz boat 50 containing the red phosphorus element 70 is placed in the quartz tube 10 and close to the opening end, and then the quartz sealing cap 20 is placed at the opening end of the quartz tub...

Embodiment 2

[0074] A method for preparing a silicon-phosphorus alloy, the preparation steps of which are the same as steps 1-5, 7-8 in Example 1, wherein the difference in step 6 is: the heating stage of the high-temperature zone: the temperatures of the five temperature zones in the high-temperature zone are respectively From room temperature to 1000°C, the temperature of the three temperature zones in the low temperature zone rose from room temperature to 400°C respectively. Other conditions in step 6 were also the same as in Example 1. No alloy material was prepared in this example.

Embodiment 3

[0076] A method for preparing a silicon-phosphorus alloy, the preparation steps of which are the same as steps 1-5, 7-8 in Example 1, wherein the difference in step 6 is: the heating stage of the high-temperature zone: the temperatures of the five temperature zones in the high-temperature zone are respectively From room temperature to 1130°C, the temperature of the three temperature zones in the low temperature zone rose from room temperature to 420°C respectively, and other conditions in step 6 were also the same as in Example 1.

[0077] According to this embodiment, the phosphorus content in the prepared silicon-phosphorus alloy is 44.87%, the silicon content is 54.99%, the sulfur content is 0.04%, the magnesium content is 0.05%, and the sodium content is 0.05%.

[0078]See Table 2 for the phosphorus content, silicon content, sulfur content, magnesium content, and sodium content of a silicon-phosphorus alloy prepared in Examples 1-3.

[0079] Table 2: Comparison of phosphor...

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Abstract

The invention discloses a preparation method of a silicon-phosphorus alloy, and relates to the technical field of semiconductor materials. The method comprises the following specific steps: cleaning and drying an appliance; respectively weighing a silicon elementary substance and a red phosphorus elementary substance according to the weight percentage; putting the silicon elementary substance and the red phosphorus elementary substance into the appliance, vacuumizing a quartz tube by using vacuumizing equipment, and then performing vacuum tube sealing on the quartz tube; putting the quartz tube into a high-pressure horizontal furnace, enabling the silicon elementary substance to be positioned in a high-temperature area of the high-pressure horizontal furnace, enabling the red phosphorus elementary substance to be positioned in the low-temperature area of the high-pressure horizontal furnace, and enabling the quartz block to be positioned between the high-temperature area and the low-temperature area of the high-pressure horizontal furnace; placing temperature thermocouples at two ends of the quartz boat respectively; performing variable-temperature treatment on the quartz tube; controlling internal and external pressure balance of the quartz tube; and synthesizing alloy, cutting the quartz tube, and taking out the alloy material. The method has the advantages that alloy preparation is carried out in the closed quartz tube so as to avoid external pollution, further material purification is carried out by using a directional solidification technology, and the purity of the synthesized silicon-phosphorus alloy is high.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a method for preparing a silicon-phosphorus alloy. Background technique [0002] Due to the extremely low resistivity and some unique characteristics of heavily doped phosphorus silicon, using it as a substrate can effectively solve the soft failure and latch-up effect in integrated circuits, and can effectively reduce the loss of power devices . The growth of phosphorus-doped silicon single crystal generally adopts the element doping method. In the traditional process, phosphorus is used as a dopant. Due to the high vapor pressure of phosphorus, a large amount of phosphorus will volatilize during the growth of single crystals, and it is difficult to effectively incorporate it into silicon single crystals, especially for heavily doped phosphorus. For monocrystalline silicon, the more phosphorus element needs to be doped, the greater the phosphorus volatilization...

Claims

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Application Information

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IPC IPC(8): C01B33/02C01B25/00C30B29/06C30B35/00
CPCC01B33/02C01B25/003C30B29/06C30B35/007
Inventor 何建军赵有文沈桂英刘京明
Owner 如皋市化合物半导体产业研究所
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