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Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device

A field effect transistor and device technology, applied in semiconductor devices, circuits, electrical components, etc., can solve the problems of increasing the off-state current of the device, limiting the driving current, and affecting the performance of the device.

Pending Publication Date: 2021-09-07
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the above-mentioned prior art: for a single-channel device, its drive current is always limited by the number of carriers that can be stored in a single channel; for a dual-channel device, the additional conduction channel is When increasing the drive current of the device, it also increases the off-state current of the device accordingly, which affects the performance of the device, and the way of forming a double channel through double gate control adds an additional device connection terminal, which increases the complexity of the device application

Method used

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  • Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device
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  • Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device

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Embodiment 1

[0054] The second channel is formed by carriers introduced by surface doping on one side of the channel region corresponding to the second channel.

[0055] Correspondingly, see Figure 7 , if it is an N-type silicon-based device, the doping concentration of the interface can be changed by doping the surface of the channel region 203a on the corresponding side of the second channel 2032a with donor atoms, such as phosphorus and arsenic; Figure 8 , if it is a P-type silicon-based device, the doping concentration of the interface can be changed by doping the surface of the channel region 203b corresponding to the side of the second channel 2032b with acceptor atoms, such as boron.

[0056] Preferably, the doping concentration is such that when the device 200a, 200b is applied with a turn-on voltage, the carrier surface density in the second channel 2032a, 2032b is greater than the carrier surface density in the first channel 2031a, 2031b , so that the device provided by this e...

Embodiment 2

[0058] With reference Figure 9 and Figure 10 The field effect transistor device 300a, 300b further includes an insulating layer 31a, 31b disposed on the surface of the active layer 30a, 30b adjacent to the second channel 3032a, 3032b, and the second channel 3032a, 3032b is formed by the insulating layer 31a, 31b. The injected charge is formed.

[0059] Correspondingly, see Figure 9 , if it is an N-type device, it can be injected into the insulating layer 31a by local positive charges, such as H + , hole realization; Figure 10 , if it is a P-type device, it can be locally injected negative charges in the insulating layer 31b, such as F - , Cl - , Electronics and so on. In this way, high-density fixed charges are formed in the insulating layer, and through electrostatic induction, carriers of the second channel are generated at the channel region adjacent to the insulating layer. It should be noted that the "local" here refers to a part of the insulating layer corresp...

Embodiment 3

[0063] ginseng Figure 11 The field effect transistor device 400 includes a semiconductor material layer 41 disposed on the active layer 40, the semiconductor material layer 41 and the active layer 40 form a heterostructure, and the second channel 4032 consists of two channels distributed in the heterostructure. Two-dimensional electron gas channels or two-dimensional hole gas channels are formed.

[0064]Specifically, the semiconductor material layer 41 and the active layer 40 have different bandgap widths, and for example, by controlling the interval between the semiconductor material layer 41 and the source region 401 or the drain region 402, so that the formed two-dimensional electron gas The channel does not conduct the source and drain regions.

[0065] Of course, in some alternative embodiments, it is also possible, for example, to perform surface treatment on the channel region to form a two-dimensional electron-gas channel or a two-dimensional hole-gas channel, which...

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Abstract

The invention provides a single-gate field effect transistor device and a method for regulating and controlling current of the single-gate field effect transistor device, and aims to solve the problem that the driving current of the single-gate field effect transistor device in the prior art cannot be effectively improved and cannot meet application requirements. The field effect transistor comprises an active layer, a source region and a drain region which are formed on the two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is set as follows: when the device is closed, a depletion type second channel is spontaneously formed in the channel region, and the second channel is not communicated with the source region and the drain region; when the device is started, a second channel and a first channel with the same polarity as the second channel are formed in the channel region; and at least one of the first channel and the second channel inject carriers into the other of the first channel and the second channel, so that the source and the drain are communicated, and the carriers of the second channel contribute a starting current of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a single gate field effect transistor device and a method for regulating its driving current. Background technique [0002] With the development of integrated circuits, increasing the driving current of field effect transistor devices is becoming more and more important in practical applications. At present, there are several ways to increase the driving current of field effect transistor devices: ① change the geometric size of the device, that is, increase the ratio of channel width (W) to channel length (L); ② use double gate control to form a dual channel device , two enhanced channels are controlled to be formed on two opposite sides of the active region, and are respectively connected to the source and drain regions of the device when the device is turned on; ③ change the material of the active region, use a material with a higher mobility, etc. . ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/10
CPCH01L29/78H01L29/1033H01L29/408H01L29/7781H01L29/78696H01L29/7838H01L29/7839
Inventor 王明湘赵金凤张冬利王槐生
Owner SUZHOU UNIV
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