Single-gate field effect transistor device and method for regulating and controlling driving current of single-gate field effect transistor device

Abstract

The invention provides a single-gate field effect transistor device and a method for regulating and controlling current of the single-gate field effect transistor device, and aims to solve the problem that the driving current of the single-gate field effect transistor device in the prior art cannot be effectively improved and cannot meet application requirements. The field effect transistor comprises an active layer, a source region and a drain region which are formed on the two sides of the active layer, and a channel region located between the source region and the drain region. The field effect transistor device is set as follows: when the device is closed, a depletion type second channel is spontaneously formed in the channel region, and the second channel is not communicated with the source region and the drain region; when the device is started, a second channel and a first channel with the same polarity as the second channel are formed in the channel region; and at least one of the first channel and the second channel inject carriers into the other of the first channel and the second channel, so that the source and the drain are communicated, and the carriers of the second channel contribute a starting current of the device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a single gate field effect transistor device and a method for regulating its driving current. Background technique [0002] With the development of integrated circuits, increasing the driving current of field effect transistor devices is becoming more and more important in practical applications. At present, there are several ways to increase the driving current of field effect transistor devices: ① change the geometric size of the device, that is, increase the ratio of channel width (W) to channel length (L); ② use double gate control to form a dual channel device , two enhanced channels are controlled to be formed on two opposite sides of the active region, and are respectively connected to the source and drain regions of the device when the device is turned on; ③ change the material of the active region, use a material with a higher mobility, etc. . ...

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Problems solved by technology

[0003] In the above-mentioned prior art: for a single-channel device, its drive current is always limited by the number of carriers that can be stored in a single channel; for a dual-channel device, the additional conduction channel is When increasing the drive current of the device, it also increases the off-state current of the device accordingly, which affects the performance of the device, and the way of forming a double channel through double gate control adds an additional device connection terminal, which increases the complexity of the device application

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