Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Spin-wave field-effect transistor based on carrier control and its preparation method and application

A field effect transistor and spin wave technology, which is applied in the field of quantum spin wave devices, can solve the problems of very high preparation process requirements, unknown cycling characteristics with electric field, and difficulty in realizing electric field response, so as to achieve low thermal management cost and accelerate commercial use. process and reduce replacement costs

Active Publication Date: 2022-05-03
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the magnetic anisotropy field at the heterojunction interface has very high requirements on the preparation process, the field strength is relatively weak, and the cycle characteristics with the electric field are unknown. At present, it is difficult to achieve a large and stable response to the electric field.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Spin-wave field-effect transistor based on carrier control and its preparation method and application
  • Spin-wave field-effect transistor based on carrier control and its preparation method and application
  • Spin-wave field-effect transistor based on carrier control and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Such as figure 2 Shown is a side view of the spin wave field effect transistor based on carrier regulation described in this embodiment.

[0039] A spin-wave field effect transistor based on carrier regulation, including a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt), a P-type semiconductor thin film silicon (Si), and a magnetic thin film yttrium iron garnet Stone (YIG), microwave antenna chromium / gold (Cr / Au), and top electrode layer chromium / gold (Cr / Au).

[0040] Apply a positive bias on the top electrode layer to ensure that the electric field strength is greater than 0.02V / nm and less than 0.5V / nm at the same time, and an N-type inversion layer will appear on the upper surface of the P-type semiconductor film, adjusting the spin wave on the lower surface of the magnetic film propagating, the spin wave is regulated by the carrier electrons in the inversion layer.

[0041] The preparation process of the spin w...

Embodiment 2

[0049] Such as image 3 Shown is a side view of the spin wave field effect transistor based on carrier regulation described in this embodiment.

[0050] A spin-wave field effect transistor based on carrier regulation, including a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt), a magnetic thin film of yttrium iron garnet (YIG), and a P-type semiconductor thin film Silicon (Si), Insulated Gate Silicon Dioxide (SiO 2 ), microwave antenna chromium / gold (Cr / Au), and top electrode layer chromium / gold (Cr / Au).

[0051] Apply a negative bias voltage on the top electrode layer to ensure that the electric field strength is greater than 0.02V / nm and less than 0.5V / nm at the same time, and an N-type inversion layer will appear on the lower surface of the P-type semiconductor film, adjusting the spin wave on the upper surface of the magnetic film propagating, the spin wave is regulated by the carrier electrons in the inversion layer. ...

Embodiment 3

[0061] A spin-wave field effect transistor based on carrier regulation, including a gadolinium gallium garnet (GGG) single crystal substrate, a bottom electrode layer of platinum (Pt), an N-type semiconductor film of indium tin oxide (ITO), and a magnetic film of yttrium Iron garnet (YIG), microwave antenna chromium / gold (Cr / Au), and top electrode layer chromium / gold (Cr / Au).

[0062] Apply a negative bias voltage on the top electrode layer to ensure that the electric field strength is greater than 0.02V / nm and less than 0.5V / nm at the same time, a P-type inversion layer will appear on the upper surface of the N-type semiconductor film, and the spin wave will be adjusted on the lower surface of the magnetic film. propagating, the spin wave is regulated by the carrier holes in the inversion layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a spin wave field effect transistor based on carrier control, which belongs to the field of quantum spin wave devices. The spin wave field effect transistor includes a substrate, a bottom electrode layer and a spin wave field effect structure formed on the substrate, and a top electrode layer and a microwave antenna formed on the spin wave field effect structure. The device applies a voltage in the vertical direction through the upper and lower electrodes, so that an inversion layer appears on the surface of the semiconductor film. The inversion layer is in close contact with the spin wave propagation plane in the magnetic film, and the carrier concentration in the inversion layer is adjusted by using the local voltage. The spin wave affects the electric field regulation of the spin wave transmission characteristics. The spin wave device in the present invention has low power consumption and simple structure. Compared with the prior art, it has the advantages of stable and reliable response to the electric field. The technology of responding to the thickness of the inversion layer of the semiconductor thin film and the carrier concentration with the electric field is very mature. Modern semiconductor process technologies are compatible with each other.

Description

technical field [0001] The invention belongs to the technical field of quantum spin wave devices, and in particular relates to a spin wave field effect transistor based on carrier regulation and its preparation method and application. Background technique [0002] As the traditional semiconductor processing process is significantly slowed down by physical effects, spin wave devices use spin wave amplitude, phase and frequency as the carrier of information transmission and processing in the process of information transmission, and there is no transmission of physical particles in the process. Compared with traditional CMOS devices, it has extremely low power consumption, and is considered to be one of the important ways to realize the "post-Moore era". There are generally two implementation schemes for existing spin wave devices: one is to regulate the spin wave through a spatially distributed magnetic field, electric field or thermal field, and the other is local contact fie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66H01L29/78H01L21/336
CPCH01L29/66984H01L29/78H01L29/66477
Inventor 金立川徐嘉鹏宋祥林张怀武唐晓莉钟智勇
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com