Spin wave field effect transistor based on carrier regulation and control and preparation method and application thereof

Abstract

The invention discloses a spin wave field effect transistor based on carrier regulation and control, and belongs to the field of quantum spin wave devices. The spin wave field effect transistor comprises a substrate, a bottom electrode layer and a spin wave field effect structure which are formed on the substrate, anda top electrode layer and a microwave antenna which are formed on the spin wave field effect structure. According to the device, voltage is applied in the vertical direction through an upper electrode and a lower electrode, so that an inversion layer appears on the surface of a semiconductor film, the inversion layer is in close contact with a spin wave propagation plane in a magnetic film, the carrier concentration in the inversion layer is adjusted through local voltage, spin waves are affected, and electric field regulation and control of spin wave transmission characteristics are achieved. The spin wave device is low in power consumption and simple in structure, compared with the prior art, the device has the advantage of stable and reliable response along with the electric field, a technology that the semiconductor film inversion layer thickness and carrier concentration response with the electric field is very mature, and mutual compatibility with the modern semiconductor technology is achieved.

Description

technical field [0001] The invention belongs to the technical field of quantum spin wave devices, and in particular relates to a spin wave field effect transistor based on carrier regulation and its preparation method and application. Background technique [0002] As the traditional semiconductor processing process is significantly slowed down by physical effects, spin wave devices use spin wave amplitude, phase and frequency as the carrier of information transmission and processing in the process of information transmission, and there is no transmission of physical particles in the process. Compared with traditional CMOS devices, it has extremely low power consumption, and is considered to be one of the important ways to realize the "post-Moore era". There are generally two implementation schemes for existing spin wave devices: one is to regulate the spin wave through a spatially distributed magnetic field, electric field or thermal field, and the other is local contact fie...

AI Technical Summary

Problems solved by technology

However, the magnetic anisotropy field at the heterojunction interface has very high requirements on the preparation process, the field strength is relatively weak, and the cycle characteristics with the electric field are unknown. At present, it is difficult to achieve a large and stable response to the electric field.

Images