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Storage unit, data writing and reading method thereof, memory and electronic equipment

A technology of data writing and random storage, applied in the fields of storage cells and data writing and reading methods, electronic equipment, and memory, can solve the problems of magnetic random access memory being unable to take into account controllability and high integration of devices, and achieve suitable For promotion and application, to meet the effect of manufacturing high density and easy implementation

Pending Publication Date: 2021-08-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In order to solve the problem that the conventional magnetic random access memory cannot take into account the controllable magnetic moment reversal direction and the high integration of the device, the present invention provides a storage unit and its data writing and reading method, memory, and electronic equipment, so as to obtain the magnetic moment Highly integrated devices with controllable flip direction, etc.

Method used

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  • Storage unit, data writing and reading method thereof, memory and electronic equipment
  • Storage unit, data writing and reading method thereof, memory and electronic equipment

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Embodiment Construction

[0025] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0026] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a storage unit, a data writing and reading method thereof, a memory and electronic equipment. The memory cell comprises a semiconductor substrate, a first insulating dielectric layer, a ferroelectric film layer, a bottom electrode, a tunnel junction, a first metal interconnection part, a second metal interconnection part, a third metal interconnection part and a fourth metal interconnection part. The first insulating dielectric layer is formed on the semiconductor substrate, the ferroelectric film layer is arranged on the first insulating dielectric layer, the bottom electrode is formed on the ferroelectric film layer, and the tunnel junction is formed on the bottom electrode. The first metal interconnection part is connected with the first end of the bottom electrode, and the third metal interconnection part is connected with the second end of the bottom electrode. The second metal interconnection part is connected with the ferroelectric film layer, and the fourth metal interconnection part is connected with the tunnel junction. The directional overturning of the magnetic moment in the tunnel junction can be controlled based on the arranged ferroelectric film layer. Based on the structural design of the memory device unit, an external magnetic field is not needed, and the requirement of high integration level of the device is fully met.

Description

technical field [0001] The present invention relates to the technical field of magnetic random access memory based on voltage control, and more specifically, the present invention can provide a storage unit, a data writing and reading method thereof, a memory, and an electronic device. Background technique [0002] At present, MRAM (Magnetic Random Access Memory) refers to a random access memory that can store data by changing the magnetization state, and has the advantages of good non-volatility, low power consumption, and radiation resistance. The most basic storage unit of MRAM is Magnetic Tunnel Junction (MTJ, Magnetic Tunnel Junction). Under the action of current, the magnetic moment in the tunnel junction is induced to flip, but the direction of this flip is random. To make the flipping direction controllable, the general solution is to realize the magnetic moment oriented flipping by means of an external magnetic field. However, the method of applying an external mag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L27/22G11C11/16H10N50/10H10N52/80H10N52/00
CPCG11C11/161G11C11/1673G11C11/1675H10B61/00H10N50/10G11C11/18G11C11/22G11C11/1659H10N50/80H10N52/80H10N52/00
Inventor 杨美音罗军崔岩许静
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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