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Solar blind ultraviolet photoelectric detector and application thereof

A technology of electrical detectors and ultraviolet light, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of poor spectral selectivity and less spectral selection of detectors, and achieve improved spectral selectivity, high spectral selectivity, and improved stability sexual effect

Pending Publication Date: 2021-08-24
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there are still few mentions of spectral selection in the existing reports of ultraviolet detectors, and most of them are concentrated in the solar blind and visible light regions, resulting in a wide range of spectral selection. Problem, to provide a solar-blind ultraviolet photodetector with a thin film transistor structure with spectral modulation function

Method used

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  • Solar blind ultraviolet photoelectric detector and application thereof
  • Solar blind ultraviolet photoelectric detector and application thereof
  • Solar blind ultraviolet photoelectric detector and application thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0045] The sun-blind ultraviolet detector of the present embodiment adopts such as figure 1 Bottom gate structure shown.

[0046] Substrate 1, gate electrode 2, gate dielectric layer 3, channel layer 4 and cover layer 5 are sequentially made of heavily doped silicon, metal aluminum, silicon oxide, amorphous gallium oxide, aluminum oxide or a stack of aluminum oxide and silicon oxide. layer, the specific film system is Si-Al-SiO 2 -Ga 2 o 3 -Al 2 o 3 (increased anti-reflection layer) and Si-Al-SiO 2 -Ga 2 o 3 -Al 2 o 3 -SiO 2 (anti-reflective layer in laminated form).

[0047] By changing the thickness of different film layers, the reflectance of the film system to light in different bands is simulated by using ellipsometric software, and the reflection gain multiples at 254nm, 320nm and 450nm bands are calculated.

[0048] Finally, the optimal thickness of the film system is obtained respectively, using the Al enhancement layer and the Al 2 o 3 Cover layer: Si(1m...

Embodiment 2

[0057] The sun-blind ultraviolet detector of the present embodiment adopts such as figure 1 Bottom gate structure shown.

[0058] Substrate 1, gate electrode 2, gate dielectric layer 3, channel layer 4, and cover layer 5 are made of heavily doped silicon, metal aluminum, aluminum oxide, amorphous gallium oxide, and aluminum oxide in sequence, and the specific film system is Si-Al -Al 2 o 3 -Ga 2 o 3 -Al 2 o 3 (add anti-reflection layer).

[0059] By changing the thickness of different film layers, the reflectance of the film system to light in different bands is simulated by using ellipsometric software, and the reflection gain multiples at 254nm, 320nm and 450nm bands are calculated.

[0060] The optimal film thickness is Si(1mm)-Al(50nm)-Al 2 o 3 (150nm)-Ga 2 o 3 (190nm)-Al 2 o 3 (20nm). It also includes a comparison film system that does not modify the surface of the channel layer and does not use a metal aluminum layer with an anti-reflection effect, specific...

Embodiment 3

[0069] The sun-blind ultraviolet detector of the present embodiment adopts such as figure 1 Bottom gate structure shown.

[0070] Substrate 1, gate electrode 2, gate dielectric layer 3, channel layer 4, and cover layer 5 are made of heavily doped silicon, metal aluminum, hafnium oxide or stacked layers of silicon oxide and hafnium oxide, amorphous gallium oxide, oxide Lamination of aluminum or aluminum oxide and silicon oxide, the specific film system is Si-Al-HfO 2 -Ga 2 o 3 -Al 2 o 3 (Add anti-reflection layer), Si-Al-HfO 2 -Ga 2 o 3 -SiO 2 -Al 2 o 3 (anti-reflection layer in laminated form) and Si-Al-SiO 2 -HfO 2 -Ga 2 o 3 -SiO 2 -Al 2 o 3 (Gate dielectric layer and anti-reflection layer in stacked form). By changing the thickness of different film layers, the reflectance of the film system to light in different bands is simulated by using ellipsometric software, and the reflection gain multiples at 254nm, 320nm and 450nm bands are calculated. Finally, th...

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Abstract

The invention discloses a bottom gate structure solar blind ultraviolet photoelectric detector, which comprises a substrate, a gate electrode, a gate dielectric layer, a channel layer, a covering layer, a source electrode and a drain electrode. The gate electrode is formed on the surface of the substrate, the gate dielectric layer is formed on the surface of the gate electrode, the channel layer is formed on the surface of the gate dielectric layer, and the covering layer, the source electrode and the drain electrode are respectively formed on the surface of the channel layer; the source electrode is separated from the electric leakage covering layer; the invention further discloses a top gate structure solar blind ultraviolet photoelectric detector, a covering layer is formed on the surface of a substrate, a channel layer is formed on the surface of the covering layer, a gate dielectric layer, a drain electrode and a source electrode are formed on the surface of the channel layer, the drain electrode and the source electrode are separated by the gate dielectric layer, and a gate electrode is formed on the surface of the gate dielectric layer and is not connected with the source electrode and the drain electrode. The solar blind ultraviolet photoelectric detector disclosed by the invention has relatively high spectral selectivity. The invention further discloses application of the solar-blind ultraviolet photoelectric detector in wearable materials, and solar-blind ultraviolet light can be detected more conveniently.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a sun-blind ultraviolet photodetector and its application. Background technique [0002] The wavelength of ultraviolet light is short, and its wavelength range is between 10-400nm. According to the wavelength from long to short, ultraviolet light is generally divided into four bands, UV-A, UV-B, UV-C, and UVV. Among them, ultraviolet light with a wavelength of less than 280nm is called "sun-blind ultraviolet light", which is absorbed by the ozone layer and water vapor particles when it enters the atmosphere. Therefore, solar-blind ultraviolet detection can eliminate the concerns of interference and achieve efficient and accurate detection. In addition, it has a wide range of application requirements in power grid security monitoring, medical imaging, environmental and biochemical detection, forest fire alarm and other livelihood fields. [0003] At present, th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/113H01L31/0216
CPCH01L31/1136H01L31/02161
Inventor 梁凌燕裴郁曹鸿涛张恒博
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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