Novel broadband terahertz CMOS low-noise amplifier

Abstract

The invention discloses a novel broadband terahertz CMOS low-noise amplifier, and belongs to the technical field of integrated circuits. The circuit comprises a bias device, an on-chip transformer, an equivalent low-coupling-coefficient transformer of a T-shaped inductor structure, and an operational amplifier. The bias device is used for feeding and is used as an input end of the amplifier circuit for supplying power; the on-chip transformer is used for improving gain, enlarging a tuning range and reducing power consumption; the function of the transformer with the equivalent low coupling coefficient of the T-shaped inductor structure is equivalent to that of an on-chip transformer, which is used for further reducing the insertion loss of a matching network and improving the circuit gain; the operational amplifier is used for carrying out impedance conversion; the bias device is connected with the operational amplifier; the on-chip transformer is connected with the operational amplifier; and the operational amplifier is connected with the transformer with the equivalent low coupling coefficient of the T-type inductance structure.

Description

technical field [0001] The invention relates to the technical field of integrated circuits, in particular to a novel broadband terahertz CMOS low-noise amplifier. Background technique [0002] A low noise amplifier is an amplifier with a very low noise figure. It is generally used as a high-frequency or intermediate-frequency preamplifier for various radio receivers, and an amplifying circuit for high-sensitivity electronic detection equipment. In the case of amplifying weak signals, the noise of the amplifier itself may seriously interfere with the signal, so it is desirable to reduce this noise to improve the output signal-to-noise ratio. [0003] Traditional low-noise amplifiers used in communication systems have narrow bandwidths and low frequencies, while terahertz low-noise amplifiers require wide bandwidths and high frequencies. Compared with traditional low-noise amplifiers, the design difficulty is greatly increased. Traditional terahertz low-noise amplifiers gene...

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Problems solved by technology

At the same time, the Q value of the transmission line is generally within 5, or even as low as about 2, which will reduce the gain of the low-noise amplifier based on the transmission line

[0005] For broadband low-noise amplifiers, transformers with low coupling coefficients are required, and transformers with low coupling coefficients will lead to a relatively high insertion loss. Therefore, this design proposes an equivalent low-coupling coefficient transformer based on a T-shaped inductor structure to increase the gain.

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