Light emitting diode with nitrogen polar surface n-type electron blocking layer

Abstract

The invention discloses a light emitting diode with a nitrogen polar surface n-type electron barrier layer. The light emitting diode comprises a substrate, a nitrogen polar nitride layer, a polarity reversal nitride layer, an n-type nitride ohmic contact layer, the n-type nitrogen polar surface electron barrier layer, a non-doped superlattice structure layer, a multi-quantum well active layer and a p-type nitride ohmic contact layer distributed from bottom to top in sequence; and an n-type electrode and a p-type electrode are respectively arranged on the n-type nitride ohmic contact layer and the p-type nitride ohmic contact layer. The nitrogen polar surface n-type electron blocking layer can limit spatially the number of electrons entering an active region; and since a traditional p-type doped electron barrier layer is removed, the injection rate of the holes can be increased, the number of the holes and the number of the electrons injected into the active region are kept at a balanced level, and the probability of electron and hole radiation recombination luminescence in the active region can be improved, so that the performance of the light emitting diode is improved.

Description

technical field [0001] The invention provides a light-emitting diode (LED) with a nitrogen polar surface n-type electron blocking layer, which belongs to the technical field of semiconductor optoelectronic materials and device manufacturing. Background technique [0002] Because LED has the advantages of high efficiency, energy saving, high reliability, and long life, and has great advantages compared with traditional lighting sources in terms of energy saving, emission reduction, and environmental protection, it has gradually replaced traditional lighting methods such as fluorescent lamps and incandescent lamps. . However, studies have shown that if figure 2 As shown, under the condition of high current injection, the internal quantum efficiency of LED decreases rapidly, and electrons can easily overcome the limitation of quantum wells to reach the p region and carry out non-radiative recombination with holes, which is one of the factors that lead to the decrease of LED lu...

AI Technical Summary

Problems solved by technology

However, these electron blocking layers still cannot satisfactorily solve the following technical problems: 1) The traditional p-type electron blocking layer also reduces the hole injection efficiency while blocking electron leakage, resulting in the radiative recombination efficiency of carriers in the LED 2) The lattice mismatch between the multi-quantum well active region and the electron blocking layer is generally large, resulting in a strong polarization electric field in the active region, causing the energy band bending at the heterojunction interface, and electrons The wave function of the hole is separated in space, reducing the radiative recombination efficiency of the carrier, which is the so-called quantum-confined Stark effect; 3) In order to improve the hole injection efficiency, p-type electrons on the nitrogen polar surface are used The barrier layer often needs to be heavily doped with Mg to induce polarity reversal, which will cause Mg doping aggregation in the film, resulting in the deterioration of crystal quality

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