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Epitaxial structure, light-emitting device and manufacturing method of epitaxial structure

A technology of epitaxial structure and fabrication method, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of difficulty in stress control of epitaxial structure, difficulty in controlling wavelength uniformity, etc.

Active Publication Date: 2022-02-11
CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The larger the substrate size, the more difficult it is to control the stress during the growth of the epitaxial structure, so the more difficult it is to control the wavelength uniformity

Method used

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  • Epitaxial structure, light-emitting device and manufacturing method of epitaxial structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] The stress release layer includes a first stress release layer 30 , a second stress release layer 40 , a third stress release layer 50 and a fourth stress release layer 60 . The first stress release layer 30 is formed on the buffer layer 20, the second stress release layer 40 is formed on the first stress release layer 30, the third stress release layer 50 is formed on the second stress release layer 40, and the fourth stress release layer 60 is formed on the third stress release layer 50 , and the N-type GaN layer 70 is formed on the fourth stress release layer 60 .

[0064] Wherein, the material of the first stress release layer 30 is AlGaN (aluminum gallium nitride), wherein the content of Al (aluminum) component is 50%-90%. Optionally, the proportion of the Al component can be 50%, 60%, 70%, 80%, 90%, etc., preferably, the proportion of the Al component is 75%.

[0065] The material of the first stress release layer 30 is AlGaN with a relatively high content of Al,...

Embodiment 2

[0083] This embodiment is basically the same as Embodiment 1, the difference is that the stress release layer only includes the first stress release layer 30, without the second stress release layer 40, the third stress release layer 50 and the fourth stress release layer 60, N type The GaN layer 70 is formed on the first stress release layer 30 .

[0084] In this embodiment, the structure, manufacturing conditions, growth thickness, and beneficial effects of the first stress release layer 30 can refer to Embodiment 1, and will not be repeated here.

Embodiment 3

[0086] This embodiment is basically the same as the first embodiment, except that the stress release layer only includes the first stress release layer 30 and the third stress release layer 50 , without the second stress release layer 40 and the fourth stress release layer 60 . Wherein, the third stress release layer 50 is directly formed on the first stress release layer 30 , and the N-type GaN layer 70 is formed on the third stress release layer 50 .

[0087] In this embodiment, the structure, manufacturing conditions, growth thickness and beneficial effects of the first stress release layer 30 and the third stress release layer 50 can refer to the first embodiment, and will not be repeated here.

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Abstract

The invention relates to an epitaxial structure, a light-emitting device and a manufacturing method of the epitaxial structure. The epitaxial structure comprises a buffer layer and a stress release layer which are sequentially formed on a substrate; the stress release layer comprises a first stress release layer, wherein the first stress release layer is made of AlGaN, and the content of an Al component accounts for 50%-90%. The first stress release layer is made of AlGaN with the high Al component content, pressure stress can be introduced in advance, and high-quality crack-free GaN thin film epitaxial growth is achieved. The first stress release layer with the high Al component not only filters a large number of dislocations, but also enables part of dislocation turns to be extinguished due to introduced pressure stress, the GaN thin film with a smooth mirror surface, no cracks and low dislocation density is finally achieved, the stress level of an epitaxial structure is controlled under the condition that the size of the substrate is large, and then the wavelength uniformity is controlled.

Description

technical field [0001] The present application relates to the field of semiconductor light emitting technology, in particular to an epitaxial structure, a light emitting device and a method for manufacturing the epitaxial structure. Background technique [0002] In order to promote the commercialization of Micro-LED (Micro-Light Emitting Diode, micro-light emitting diode), it is imperative to introduce large-scale epitaxial substrates to reduce costs, but the preferred large-scale substrates (silicon substrates or sapphire substrates) are all There are significant lattice mismatch and thermal mismatch problems with GaN, the main material of the epitaxial layer. The warpage problem caused by lattice thermal mismatch will become more significant after the substrate size increases, and the warpage change directly affects the uniformity of the epitaxial structure. To solve this problem, it is necessary to introduce a more reasonable stress relief layer at the bottom layer to of...

Claims

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Application Information

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IPC IPC(8): H01L33/12H01L33/00
CPCH01L33/12H01L33/007
Inventor 翟小林杨顺贵张青洲张海林周毅
Owner CHONGQING KONKA PHOTOELECTRIC TECH RES INST CO LTD
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