A light emitting diode with a nitrogen polar face n-type electron blocking layer
A technology of electron blocking layer and light-emitting diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of radiation recombination efficiency and luminous efficiency reduction, reduction of carrier radiation recombination efficiency, heterojunction interface energy band bending, etc. , to achieve the effect of reducing the two-dimensional electron gas density, increasing the probability of radiative recombination, and increasing the effective potential barrier
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[0021] The present invention will be further explained below in conjunction with the accompanying drawings.
[0022] like figure 1 As shown, a light emitting diode with an n-type electron blocking layer on a nitrogen polar surface includes a substrate 101, a nitrogen polar surface nitride layer 102, a polarity inversion nitride layer 103, and a type nitride ohmic contact layer 104, n-type nitrogen polar surface electron blocking layer 106, undoped superlattice structure nitride layer 107, multiple quantum well active layer 108, p-type nitride ohmic contact layer 109, and n-type nitride ohmic contact layer 109 The n-type electrode 105 provided on the ohmic contact layer 104 of the nitride type and the p-type electrode 110 provided on the ohmic contact layer 109 of the p-type nitride.
[0023] The nitrogen polar surface nitride layer 102 is made of gallium nitride or aluminum nitride material with uniform composition. The thickness of the polarity-reversed nitride layer 103 i...
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