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A kind of mg-bi based layered bulk crystal material and its growth method

A technology of crystal materials and growth methods, which is applied in the growth of polycrystalline materials, crystal growth, and single crystal growth, etc., can solve the problems of inability to obtain high-quality bulk crystal materials, high growth costs, and difficulty in growth amplification, and achieves reuse. High efficiency, improved crystal quality and growth efficiency, and uniform distribution of constituent elements

Active Publication Date: 2022-05-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above preparation method is limited by the cost of equipment and crucibles, and it is impossible to obtain low-defect high-quality bulk crystal materials, and it is difficult to grow and scale up; in addition, the literature (J.Xin et al. / Materials Today Physics 7(2018) 61-68; Adv.Mater.2020, 32, 1908218; Energy Environ.Sci., 2020, 13, 1717-1724) also reported the method of growing Mg-Bi-based single crystal by metal cosolvent method, but the crystal obtained by the above method was assisted Influenced by flux and precious metal crucible, not only the size is small (only a few millimeters), but also the growth cost is high, making it difficult to enter practical application

Method used

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  • A kind of mg-bi based layered bulk crystal material and its growth method
  • A kind of mg-bi based layered bulk crystal material and its growth method
  • A kind of mg-bi based layered bulk crystal material and its growth method

Examples

Experimental program
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Effect test

Embodiment 1

[0051] Example 1: Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 Preparation of Layered Bulk Polycrystalline Materials

[0052] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 The stoichiometric ratio of each atom is to weigh the elemental raw materials of each element in a Ta crucible; another graphite crucible is placed upside down on the Ta crucible, and the graphite crucible is placed opposite to the mouth of the Ta crucible, and the above two crucibles are protected under an Ar atmosphere. Raise the temperature to 1000°C to fully react and melt the raw materials, and then quench to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0053] (2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1000 ° C under the protection of Ar atmosphere, that is, the temperature of the empty ...

Embodiment 2

[0056] Example 2: Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 Preparation of Layered Bulk Single Crystal Materials

[0057] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 1.49 Sb 0.5 Te 0.01 The stoichiometric ratio of each atom, the single substance raw material of each element is weighed in the Ta crucible; another graphite crucible is placed upside down above the Ta crucible, and the graphite crucible and the Ta crucible are placed opposite to each other, and the above two crucibles are placed under the protection of Ar gas atmosphere , the temperature is raised to 1000°C, so that the raw materials are fully reacted and melted, and then quenched to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0058](2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1000 ° C under the protection of Ar a...

Embodiment 3

[0061] Example 3: Mg 3.2 Bi 0.99 SbT 0.01 Preparation of Layered Bulk Polycrystalline Materials

[0062] (1) In the glove box of Ar gas atmosphere, press Mg 3.2 Bi 0.99 SbT 0.01 The stoichiometric ratio of each atom, the single substance raw material of each element is weighed in the Ta crucible; another graphite crucible is placed upside down above the Ta crucible, and the graphite crucible and the Ta crucible are placed opposite to each other, and the above two crucibles are placed under the protection of Ar gas atmosphere , the temperature is raised to 1050°C, so that the raw materials are fully reacted and melted, and then quenched to obtain a polycrystalline ingot tightly adhered to the Ta crucible.

[0063] (2) Exchange the positions of the Ta crucible and the graphite crucible in step (1), so that the Ta crucible is located above the graphite crucible, put it into the descending furnace, and raise the temperature to 1050 ° C under the protection of Ar atmosphere, t...

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Abstract

The invention provides a Mg-Bi-based layered bulk crystal material and a growth method thereof. The crystal structure of the crystal material is Mg 3 Bi 2 configuration, presenting a shale-like morphology; its growth method includes the steps of: under the protection of vacuum or inert atmosphere, heating an empty non-metallic crucible for growing crystals to a predetermined temperature; injecting molten Mg-Bi-based crystal growth raw material solution into In a non-metallic crucible heated to a predetermined temperature, the crystal is grown by a crucible descent method or a seed crystal directional growth method to obtain a Mg-Bi-based matrix bulk crystal material. The growth method of the present invention is simple in process, low in cost, and can be enlarged to prepare crystals. The Mg-Bi matrix bulk crystal material obtained by the growth method of the present invention has a large size, high quality and regular layered structure, and exhibits excellent crystallization near room temperature. Thermoelectric properties can be directly applied to the preparation of thermoelectric devices.

Description

technical field [0001] The invention relates to a Mg-Bi-based layered body bulk crystal material and a growth method thereof, belonging to the technical field of crystal growth and new material preparation. Background technique [0002] Thermoelectric materials can directly realize the conversion of thermal energy and electrical energy, and have important applications in power generation and cooling of portable devices. Moreover, thermoelectric devices are considered to be an effective way to improve energy and environmental problems due to their small size, simple structure, no moving parts, no pollution, and long life. According to thermodynamic theory, the conversion efficiency of thermoelectric devices is determined by the Carnot efficiency and the thermoelectric performance (thermoelectric figure of merit) of the material itself. To further improve the thermoelectric figure of merit of thermoelectric materials and improve the conversion efficiency is the key to the rese...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/52C30B11/00C30B11/02C30B28/06H02N11/00
CPCC30B29/52C30B11/002C30B11/02C30B28/06H02N11/002
Inventor 夏盛清王琦琦刘小村
Owner SHANDONG UNIV
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