Schmitt trigger based on GaAs HEMT process

Abstract

The invention discloses a Schmitt trigger based on a GaAs HEMT process, which comprises field effect transistors fet1, fet2, fet3 and fet4. An input end IN is connected with a resistor R1, the other end of a resistor R is sequentially connected with resistors R2 and R3 in series and then is connected with a negative end VSS of a power supply, a leading-out terminal between the resistor R1 and the resistor R2 is connected with a grid electrode of the fet1, and a drain electrode of the fet1 is connected with a positive end VDD of the power supply through a resistor R4; the positive end of the power supply is connected with the drain electrode of the fet3 through a resistor R5 and is connected with the drain electrode of the fet4 through a resistor R6; the source electrode of the fet1, the source electrode of the fet2, the source electrode of the fet3 and the source electrode of the fet4 are connected with the negative electrode VSS of the power supply; the drain electrode of the fet1 is connected with the grid electrode of the fet3; the drain electrode leading-out terminal of the fet1, which is connected with the grid electrode of the fet4, of the drain electrode of the fet3 is connected to the grid electrode of the fet2, and the drain electrode of the fet2 is connected between the R3 and the R2; the drain electrode leading-out terminal of the fet3 is connected to an output in-phase end OUTP; the drain electrode leading-out terminal of the fet4 is connected to an output inverting end OUTN. The scheme of the invention has the advantages of high switching speed, small transmission delay, interference resistance, continuously adjustable output voltage in a wide range and the like.

Description

technical field [0001] The invention relates to the field of integrated circuit design, in particular to a Schmitt trigger based on GaAs HEMT technology. Background technique [0002] Gallium arsenide (GaAs) is a new generation of wide-bandgap semiconductor materials, belonging to III-V compound semiconductors, which entered the practical stage in 1964. Gallium arsenide can be made into a semi-insulating high-resistance material whose resistivity is more than 3 orders of magnitude higher than that of silicon and germanium, and is used to make integrated circuit substrates, infrared detectors, gamma photon detectors, etc. Because its electron mobility is 5 to 6 times larger than that of silicon, it has been widely used in the manufacture of microwave devices and high-speed digital circuits. Semiconductor devices made of gallium arsenide have the advantages of high frequency, high temperature, low temperature performance, low noise, and strong radiation resistance. There are...

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Problems solved by technology

Although it is not suitable for logic control circuits, when the GaAs process is determined in the integrated circuit, it is also necessary to use the GaAs process to realize some control circuits under certain circumstances. The design of the control circuit must overcome the limitations of the gallium arsenide process. The inherent defects of transistors are used to realize a reliable logic control circuit. Schmitt triggers in the prior art have a wide range of application scenarios, but the Schmitt triggers implemented by GaAs process transistors are not available in the prior art. Based on this, the application provides a Schmitt trigger circuit based on GaAs HEMT technology

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