Method for reducing molybdenum content after chamber maintenance

A chamber and content technology, applied in discharge tubes, climate sustainability, final product manufacturing, etc., can solve unsatisfactory problems, achieve the effects of reducing cleaning times, improving manufacturing yield, and reducing energy consumption

Active Publication Date: 2021-08-06
HUA HONG SEMICON WUXI LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the removal effects of Mo molybdenum elements in various methods of the prior art are not ideal.

Method used

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  • Method for reducing molybdenum content after chamber maintenance
  • Method for reducing molybdenum content after chamber maintenance
  • Method for reducing molybdenum content after chamber maintenance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The method for reducing molybdenum content after the chamber maintenance of embodiment 1 comprises the steps:

[0025] S1. Chamber maintenance;

[0026] Chamber maintenance mainly includes replacement of components and cleaning of the chamber.

[0027] Such as figure 2 As shown, the chamber is usually cleaned by injecting a process gas, such as injecting a first process gas. The first process gas is injected through the air inlet unit, which is located in the middle of the top of the cavity. The flow rate of the first process gas can be controlled between 100 sccm and 1000 sccm. The first process gas is ionized to form plasma before being passed in. The first process gas may be a gas meeting preset process requirements, such as a gas containing elements such as oxygen and fluorine, which is not limited here. At the same time, the reacted gas is discharged through the exhaust unit. This cleaning process can be repeated many times, for example, 10-20 times.

[002...

Embodiment 2

[0037] The method for reducing molybdenum content after chamber maintenance of embodiment 2 comprises the following steps:

[0038] S1. Chamber maintenance;

[0039] Same as Example 1.

[0040] S2. Detection of molybdenum content in the chamber;

[0041] Same as Example 1.

[0042] S3, molybdenum element cleaning;

[0043] The number of PE-TEOS wafers placed in this step is obtained by calculation. Other methods are the same as in Example 1.

[0044] The calculation of the number of PE-TEOS wafers put in can be obtained according to the curve fitted by the experiment, such as image 3 . When the upper limit of the concentration of molybdenum is determined, the number of PE-TEOS wafers can be determined. For example, if the concentration upper limit is set to 0.4, the number of PE-TEOS wafers to be put in is 40pcs, and the concentration upper limit is set to 0.3, and the number of PE-TEOS wafers to be put in is 80pcs.

[0045] Using the above method can put different nu...

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PUM

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Abstract

The invention discloses a method for reducing molybdenum content after chamber maintenance. The method comprises the following steps of: S1, carrying out chamber maintenance, wherein the chamber maintenance step at least comprises a cleaning substep of injecting first process gas and discharging the first process gas so as to reduce the content of metal impurity ions in a chamber, and the cleaning step is repeated for multiple times; S2, detecting the molybdenum content in the chamber to measure the content of molybdenum ions in the chamber; and S3, carrying out molybdenum element cleaning, so that the content of molybdenum ions in the cavity is reduced.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor integrated circuit, in particular to a method for reducing molybdenum content after chamber maintenance. Background technique [0002] In the manufacturing process of semiconductor integrated circuits, various metal elements will be introduced in many processes, whether it is ion implantation or etching, etc. These metallic elements adhere to the inner wall surface of the chamber as by-products. When switching between different processes, in order to rebuild the environment inside the chamber of the next manufacturing process, the chamber needs to be maintained. Warm up and test after maintenance to prepare for the next manufacturing process. As mentioned in the public documents CN108389809A, CN111952168A, CN210378986U. [0003] The metal ion content of the CIS chip used as an image sensor is an important parameter affecting the chip yield. If the metal ion content is too high, it w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCH01J37/32862Y02P70/50
Inventor 贺学兵吴长明冯大贵王玉新余鹏童光辉张欢欢
Owner HUA HONG SEMICON WUXI LTD
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