Thin film transistor and manufacturing method thereof

Abstract

The invention provides a thin film transistor and a manufacturing method thereof, and the method comprises the following steps: providing a substrate, and forming a gate electrode on the substrate; depositing a gate electrode insulating layer covering the gate electrode on the substrate; forming an oxide semiconductor layer on the gate electrode insulating layer; continuously depositing a second metal layer and a first metal layer on the oxide semiconductor layer; coating a photoresist on the first metal layer; carrying out first wet etching on the exposed first metal layer by adopting first etching liquid; performing second wet etching on the exposed second metal layer by using a second etching solution; and removing the photoresist. According to the thin film transistor and the manufacturing method thereof provided by the invention, the oxide semiconductor layer can be well protected from being etched by etching liquid, and the problem that the oxide semiconductor layer at the channel is etched off is solved.

Description

technical field [0001] The invention relates to the display field, in particular to a thin film transistor and a manufacturing method thereof. Background technique [0002] With the continuous development of science and technology, the display technology has also developed rapidly. The thin film transistor TFT (Thin Film Transistor) technology has developed from the original a-Si (amorphous silicon) thin film transistor to the current LTPS (low temperature polysilicon) thin film transistor, Oxide (Oxide) thin film transistors, etc., thin film transistors of compound semiconductor active layer materials represented by metal oxides have the advantages of high mobility, simple manufacturing process, good large-area uniformity, and low manufacturing cost. [0003] In the manufacturing technology of oxide thin film transistors, the bottom gate back channel etching (Back Channel Etch, BCE) process and the etching stopper (Etch Stopper Type, ESL) process are usually used. The ESL p...

AI Technical Summary

Problems solved by technology

[0005] In order to solve the above technical problems, the present invention proposes a thin film transistor and its manufacturing method, which can well protect the oxide semiconductor from being etched by the etching solution, and solve the problem that the oxide semiconductor at the channel is cut off

Images