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Photovoltaic inverter IGBT junction temperature online correction method and system considering aging

A photovoltaic inverter, junction temperature technology, applied in photovoltaic power generation, photovoltaic modules, control/regulation systems, etc., can solve the problem of no longer adapting to the health status of IGBTs, to ensure authenticity, strong online monitoring capabilities, and ensure accuracy sexual effect

Active Publication Date: 2021-06-04
WUHAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to the fatigue damage during the working process, the IGBT continues to age, which makes the pre-established electrothermal coupling model no longer suitable for the current IGBT health status

Method used

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  • Photovoltaic inverter IGBT junction temperature online correction method and system considering aging
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  • Photovoltaic inverter IGBT junction temperature online correction method and system considering aging

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Embodiment Construction

[0043] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not constitute a conflict with each other.

[0044] A 30kW photovoltaic inverter system is taken as a specific example below, and the specific parameters are shown in Table 1. A photovoltaic inverter IGBT module junction temperature online correction method that takes into account the aging process is used to perform online correction of the junction temperature of the inverter IGBT, and the present invention is further described in detail...

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Abstract

The invention discloses a photovoltaic inverter IGBT module junction temperature online correction method and system considering an aging process, and belongs to the field of power electronic equipment core device reliability, and the method comprises the steps: building an IGBT model electrothermal coupling model according to a photovoltaic inverter topological structure, illumination radiation intensity and environment temperature; selecting an IGBT collector-emitter electrode on-state voltage drop as an aging parameter, and designing an on-state voltage drop sampling circuit to ensure the measurement precision; aiming at IGBT modules in different aging stages, based on a large-current and small-current injection method, establishing an aging database (test current, an aging threshold value and a calibrated junction temperature value); comparing a junction temperature value output by the electrothermal coupling model with a calibrated junction temperature value, and calibrating an aging process coefficient of an aging correction formula of the electrothermal coupling model; and comparing the IGBT aging monitoring value with the aging threshold value to judge the aging process, and selecting a corresponding aging correction coefficient to ensure the accuracy of junction temperature data.

Description

technical field [0001] The invention belongs to the field of reliability of core components of power electronic equipment, and more specifically relates to an online correction method and system for the junction temperature of a photovoltaic inverter IGBT module taking into account the aging process. Background technique [0002] The photovoltaic power generation industry is one of the fastest-growing emerging industries. As a connection device between distributed power sources and distribution networks, photovoltaic inverters play a key role in the transformation and transmission of electric energy. At present, the most commonly used photovoltaic inverter is a three-phase voltage bridge inverter, whose output phase voltage contains two levels, so it is called a three-phase two-level inverter; insulated gate bipolar transistor ( Insulated Gate Bipolar Transistor (IGBT) is widely used in photovoltaic inverters due to its advantages of fast switching speed, relatively simple d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F30/36G01R31/00G06F119/08
CPCG06F30/36G01R31/003G06F2119/08H02M1/327H02M7/5387H02S40/32G05F1/567Y02E10/56G01R31/26
Inventor 何怡刚王传坤张威威隋春松李猎张慧
Owner WUHAN UNIV
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