Chromium-nickel alloy sputtering target material and preparation method and application thereof

Abstract

The invention provides a chromium-nickel alloy sputtering target material and a preparation method and application thereof. The preparation method comprises the following steps: (1) mixing chromium powder and nickel powder to obtain chromium-nickel powder; (2) filling and compacting the chromium-nickel powder obtained in the step (1) to obtain a chromium-nickel green body; (3) conducting vacuum hot pressing sintering treatment on the chromium-nickel green body obtained in the step (2) at the temperature of 850-1200 DEG C to obtain a chromium-nickel blank; and (4) machining the chromium-nickel blank obtained in the step (3) to obtain the chromium-nickel alloy sputtering target material. According to the preparation method provided by the invention, the compactness and microstructure uniformity of a target product are improved, and internal defects are eliminated.

Description

technical field [0001] The invention belongs to the technical field of sputtering targets, and relates to a chromium-nickel alloy sputtering target, in particular to a chromium-nickel alloy sputtering target and a preparation method and application thereof. Background technique [0002] Chromium-nickel alloy target is a new type of alloy target. As a good conductor for vacuum sputtering, it can be used in the field of electronic gate materials and electronic thin films. In recent years, the domestic demand for high-purity chromium-nickel targets has increased significantly. However, the domestically produced chromium-nickel targets have a narrow composition range and low density, which cannot meet the quality requirements of the high-end electronics industry, and are only partially used for low-end targets. product. At present, only a few developed countries and regions such as Japan and the United States can produce high-purity and high-density chromium-nickel targets. Res...

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Problems solved by technology

[0003] The current mainstream chromium-nickel alloy manufacturing method is smelting and casting chromium-nickel ingots and then hot rolling. However, when the chromium content exceeds 56%, chromium-nickel alloys are prone to segregation during smelting, causing problems such as uneven composition and rolling cracks. It cannot be processed into a sputtering target that meets the requirements, so it is imperative to find a new way to manufacture a nickel-chromium target (60%-70% chromium content) that meets the requirements

[0004] CN 110952064A discloses a tantalum-silicon alloy sputtering target and its preparation method. The preparation method includes powder mixing, molding, cold isostatic pressing, degassing treatment, and hot isostatic pressing at 1050-1350°C and machining to obtain a tantalum-silicon alloy sputtering target with a density of more than 99%, but the preparation method not only has a long process and cumbersome operation, but also has the disadvantage of high energy consumption, which cannot effectively reduce the cost of the microelectronics industry. Not suitable for large-scale promotion and application

[0005] CN 108754436A discloses a method for preparing a high-purity tantalum-ruthenium alloy target by vacuum hot pressing and sintering. The preparation method includes successively crushing, ball milling, mixing, mold preparation, mold loading and vibration, temperature rise and pressure, heat preservation , sampling, machining, and then prepared to obtain a density of 10.65-13.08g / cm 3 high-purity tantalum-ruthenium alloy target, but the preparation method is cumbersome to operate, and is not suitable for the preparation of chromium-nickel alloy sputtering target, because the chromium-nickel alloy sputtering target has abnormal chromium content in the densification process. Sensitive, so existing technology cannot be copied at will

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